IP Library Granted Patent US 10,403,510
Granted Patent B2
US 10,403,510 · App. 15/626,577 · Granted Sep 3, 2019

Method of fabricating a carrier-less silicon interposer using photo patterned polymer as substrate

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Quick Facts
Patent No.
US 10,403,510
App. No.
15/626,577
Granted
Sep 3, 2019
Kind
B2
Abstract

A component, e.g., interposer has first and second opposite sides, conductive elements at the first side and terminals at the second side. The terminals can connect with another component, for example. A first element at the first side can comprise a first material having a thermal expansion coefficient less than 10 ppm/° C., and a second element at the second side can comprise a plurality of insulated structures separated from one another by at least one gap. Conductive structure extends through at least one insulated structure and is electrically coupled with the terminals and the conductive elements. The at least one gap can reduce mechanical stress in connections between the terminals and another component.

Claims (9)

1. A method of fabricating a component having first and second opposite sides, the method comprising:

forming a structure comprising

a first element having a first surface coincident with or adjacent to the first side, and a second surface opposite the first surface, the first element comprising a material having a coefficient of thermal expansion of less than 10 ppm/° C.,

a second element having a surface coincident with or adjacent to the second side, the second element being coupled to the second surface of the first element,

a plurality of conductive elements at the first side,

wherein the second element comprises electrically insulated structures formed of at least one second material different from the first material, each of the insulated structures at least partially separated from on another by at least one gap extending from the surface of the second element towards the first element, and

forming a plurality of terminals at the second side configured for connection with a plurality of corresponding contacts of a another component external to the component, and electrically conductive structure configured to electrically couple the plurality of terminals with the conductive elements, the conductive structure including at least one electrically conductive interconnect extending through at least one of the insulated structures towards the first element

wherein the forming of the structure includes molding a material comprising a dielectric material to define the insulated structures separated by the at least one gap.

2. The method of claim 1 , wherein the forming of the structure includes photolithographically patterning a photoimageable material, the patterned material defining the respective insulated structures which are separated by the at least one gap.

Assignments (4)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0661 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073689/0793 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2017
From: CAO, ANDREW; NEWMAN, MICHAEL
To: INVENSAS CORPORATION
Reel/Frame 042747/0765 →