Bulk acoustic wave filter
A bulk acoustic wave (BAW) filter for passing through electric signals in a preset frequency range is provided. The BAW filter includes: a diamond substrate; a passivation layer formed on the diamond substrate; a first metal layer formed on the passivation layer; a piezoelectric layer formed on the first metal layer; a second metal layer formed on a piezoelectric layer and a metal pad formed on the first metal layer. The metal pad, first metal layer, piezoelectric layer and second metal layer form an electrical path that allows an electrical signal within a preset frequency range to pass therethrough.
1. A bulk acoustic wave filter, comprising:
a diamond substrate;
a passivation layer formed on the diamond substrate;
a first metal layer formed on the passivation layer;
a piezoelectric layer formed on the first metal layer;
a second metal layer formed on the piezoelectric layer;
a metal pad formed on the first metal layer;
wherein the metal pad, first metal layer, piezoelectric layer and second metal layer form an electrical path that allows an electrical signal within a frequency range to pass therethrough; and
a seed layer disposed between the diamond substrate and the passivation layer, formed of diamond powder and used to grow the diamond substrate thereon.
2. The bulk acoustic wave filter of claim 1 , wherein the passivation layer is formed of a dielectric material.
3. The bulk acoustic wave filter of claim 1 , wherein the piezoelectric layer is formed of a material with piezoelectric effect.
4. The bulk acoustic wave filter of claim 1 , wherein the piezoelectric layer includes at least one of GaN, AlN and ZnO.
5. The bulk acoustic wave filter of claim 1 , wherein each of the first metal layer, second metal layer and metal pad is formed of an electrically conducting metal.
6. The bulk acoustic wave filter of claim 1 , wherein the diamond substrate has at least one of a single crystal structure and a poly-crystal structure.
7. A bulk acoustic wave comprising:
a diamond substrate that does not have any through hole therein;
a passivation layer formed directly on the diamond substrate;
a first metal layer formed directly on the passivation layer;
a piezoelectric layer formed on the first metal layer;
a second metal layer formed on the piezoelectric layer;
a metal pad formed on the first metal layer;
wherein the metal pad, first metal layer, piezoelectric layer and second metal layer form an electrical path that allows an electrical signal within a frequency range to pass therethrough; and
a seed layer disposed between the diamond substrate and the passivation layer, formed of diamond powder and used to grow the diamond substrate thereon.
8. The bulk acoustic wave filter of claim 7 , wherein the passivation layer is formed of a dielectric material.
9. The bulk acoustic wave filter of claim 7 , wherein the piezoelectric layer is formed of a material with piezoelectric effect.
10. The bulk acoustic wave filter of claim 7 , wherein the piezoelectric layer includes at least one of GaN, AlN and ZnO.
11. The bulk acoustic wave filter of claim 7 , wherein each of the first metal layer, second metal layer and metal pad is formed of an electrically conducting metal.
12. The bulk acoustic wave filter of claim 7 , wherein the diamond substrate has at least one of a single crystal structure and a poly-crystal structure.