Singulation of ion-exchanged substrates
A method of making a substrate involves patterning the substrate into active areas and dicing lanes. After the substrate is patterned one or more stress layers are formed the substrate. A change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes. The substrate is subsequently diced along the dicing lanes.
1. A method comprising:
patterning a substrate into active areas and dicing lanes;
after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes, and forming the stress layers extends through more than about 50% of the thickness of the dicing lanes.
2. The method of claim 1 , wherein:
patterning the substrate comprises patterning a glass substrate into the active areas and the dicing lanes;
forming the stress layers comprises placing the glass substrate into an ion bath and forming an ion-exchanged layer in the glass substrate.
3. The method of claim 1 , further comprising forming singulated substrates by dicing the substrate along the dicing lanes.
4. The method of claim 1 , wherein the change in stress along the thickness of the substrate in the dicing lanes is substantially zero.
5. The method of claim 1 , wherein:
patterning the substrate into active areas and dicing lanes comprises masking the dicing lanes; and
forming the stress layers comprises ion-exchanging ions in the substrate until the change in stress along the thickness of the substrate in the active areas is substantially larger than the change in stress along the thickness of the substrate in the dicing lanes.
6. A method comprising:
patterning a substrate into active areas and dicing lanes; and
after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes; wherein:
patterning the substrate into active areas and dicing lanes comprises thinning the substrate in the dicing lanes; and
forming the stress layers comprises ion-exchanging ions in the active areas and in the dicing lanes until the change in stress along the thickness of the substrate in the active areas is substantially larger than the change in stress along the thickness of the substrate in the dicing lanes.
7. A subassembly comprising a substrate having active areas and dicing lanes wherein one or both of the active areas and the dicing lanes are ion exchanged and wherein the dicing lanes have a stress profile in which a change in stress along a thickness of the substrate is less than a change in stress along a thickness of the substrate in the active areas; wherein the dicing lanes comprise ion exchanged dicing lanes.
8. The subassembly of claim 7 , wherein stress in the dicing lanes is substantially uniform.
9. The subassembly of claim 7 , wherein the dicing lanes comprise non-ion exchanged dicing lanes.
10. The subassembly of claim 7 , wherein a thickness of the substrate in the dicing lanes is less than a thickness of the substrate in the active areas.
11. The subassembly of claim 7 , wherein the dicing lanes have a width of about 60% of the thickness of the dicing lanes.
12. The subassembly of claim 7 , wherein the dicing lanes are disposed along a perimeter of the substrate.
13. The subassembly of claim 7 , wherein the dicing lanes are disposed only along a perimeter of the substrate.
14. An assembly comprising:
a substrate having an active area that includes one or more stressed layers and dicing lanes disposed at least along a perimeter of the substrate, a change in stress along a thickness of the substrate in the dicing lanes being less than a change in stress along the thickness of the substrate in the active areas; and
electrical circuitry disposed on the surface of the substrate;
wherein the electrical circuitry includes at least one component configured to initiate fracture of the substrate.
15. A method comprising:
patterning a substrate into active areas and dicing lanes;
after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes;
forming the one or more stress layers comprises placing the substrate into an ion bath and forming an ion-exchanged layer in the substrate; and
the ion-exchanged layer extends through substantially all of the thickness of the dicing lanes.
16. A method comprising:
patterning a substrate into active areas and dicing lanes;
after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes;
placing the substrate into an initial ion bath before patterning the substrate; and
ion-exchanging ions in the substrate including ion-exchanging ions in the dicing lanes; wherein:
patterning the substrate into active areas and dicing lanes comprises masking the active areas of the substrate and leaving the dicing lanes unmasked; and
forming the stress layers comprises continuing to ion-exchange ions in the dicing lanes until the change in stress along the thickness of the substrate in the active areas is substantially larger than the change in stress along the thickness of the substrate in the dicing lanes.
17. The method of claim 6 , wherein thinning the substrate comprises one or more of molding, laser thinning, etching, and polishing.