Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.
1. A method of manufacturing a semiconductor device comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including:
supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and
supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system,
wherein, in the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.
2. The method according to claim 1 , wherein, in the forming of the film, the precursor and the deactivator alternately flow into the first exhaust system.
3. The method according to claim 1 , wherein, in the forming of the film, the precursor attached to an inside of the first exhaust system and the deactivator intermittently react with each other.
4. The method according to claim 1 , wherein the precursor comprises a halogen element, and
in the forming of the film, the halogen element is extracted from the precursor attached to an inside of the first exhaust system by the deactivator.
5. The method according to claim 1 , wherein, in the forming of the film, the precursor attached to an inside of the first exhaust system and the deactivator react with each other to form an oxide film on the inside of the first exhaust system.
6. The method according to claim 1 , wherein the first exhaust system is an exhaust system different from the second exhaust system.
7. The method according to claim 6 , wherein, when the reactant is exhausted from the second exhaust system, the deactivator is supplied into the first exhaust system.
8. The method according to claim 7 , wherein, when the deactivator is supplied into the first exhaust system, an inside of the first exhaust system and an inside of the process chamber do not communicate with each other.
9. The method according to claim 1 , wherein the first exhaust system is the same exhaust system as the second exhaust system.
10. The method according to claim 9 , wherein, after the precursor is exhausted from the exhaust system, the deactivator is supplied into the exhaust system before the exhaust of the reactant from the exhaust system is started.
11. The method according to claim 9 , wherein, when the reactant is exhausted from the exhaust system, the deactivator is supplied into the exhaust system.
12. The method according to claim 1 , wherein the deactivator comprises an oxidizing agent and a catalyst.
13. The method according to claim 12 , wherein the oxidizing agent contains an O—H bond.
14. The method according to claim 1 , wherein, in the forming of the film, the act of supplying the precursor and exhausting the precursor from the first exhaust system and the act of supplying the reactant and exhausting the reactant from the second exhaust system are performed intermittently and non-simultaneously.