Anisotropic conductive film including a reflective layer
An anisotropic conductive film (ACF) is disclosed. In one approach, the ACF includes a non-reflective adhesive layer including a top surface, a plurality of conductive particles included with the non-reflective adhesive layer, and a reflective adhesive layer disposed along the top surface of the non-reflective adhesive layer.
1. An anisotropic conductive film (ACF), comprising:
a non-reflective adhesive layer including a top surface;
conductive particles at least partially embedded into a surface of the non-reflective adhesive layer, the conductive particles being substantially in the form of a perturbed array; and
a reflective adhesive layer disposed along the top surface of the non-reflective adhesive layer, wherein the reflective adhesive layer comprises at least 30% reflective particles by percentage weight of the reflective adhesive layer.
2. The ACF of claim 1 , wherein the conductive particles are partially embedded along the surface of the non-reflective adhesive layer.
3. The ACF of claim 2 , wherein the array of conductive particles is along a bottom surface of the non-reflective adhesive layer.
4. The ACF of claim 1 , wherein the reflective particles are selected from the group consisting of: reflective and retro-reflective particles.
5. The ACF of claim 1 , wherein the reflective particles are an electrical insulator.
6. The ACF of claim 1 , wherein the reflective particles are high refractive index oxides selected from the group consisting of: indium-tin-oxide (ITO), zinc oxide (ZnO), titanium dioxide (TiO 2 ), indium-zinc-oxide (IZO), tin oxide (SnO), zirconium oxide (ZrO 2 ), their alloys thereof, and combinations thereof.
7. The ACF of claim 1 , wherein the reflective particles comprise TiO 2 .
8. The ACF of claim 1 , wherein the reflective adhesive layer comprises filler particles selected from the group consisting of: zinc oxide (ZnO), boron nitride (SN), silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), calcium carbonate (CaCO 3 ), calcium sulfate (CaSO 4 ), barium sulfate (BaSO 4 ), and combinations thereof.
9. The ACF of claim 1 , wherein the reflective layer comprises about 40 wt. % to about 75 wt. % reflective particles.
10. The ACF of claim 1 , wherein the ACF further comprises a release substrate disposed along a top surface of the reflective layer.
11. The ACF of claim 1 , wherein the reflective adhesive layer has a thickness ranging from about 1 μm to about 15 μm.
12. The ACF of claim 1 , wherein the reflective adhesive layer has a thickness ranging from about 3 μm to about 8 μm.
13. The ACF of claim 1 , wherein the non-reflective adhesive layer comprises at least 20,000 pcs/mm 2 of the conductive particles.
14. The ACF of claim 1 , wherein the ACF further comprises quantum dots in the non-reflective layer, the reflective layer, or both.
15. A light-emitting device, comprising:
a light-emitting housing comprising a plurality of light-emitting elements or chips, the chips comprising a chip bump for electrical connection to electrodes of an electrode substrate;
an electrode substrate; and
an anisotropic conductive film (ACF) electrically connecting the light-emitting elements or the chip bump to the electrodes of the electrode substrate, comprising:
a non-reflective adhesive layer including a top surface;
conductive particles at least partially embedded into a surface of the non-reflective adhesive layer, the conductive particles being substantially in the form of a perturbed array; and
a reflective adhesive layer disposed along the top surface of the non-reflective adhesive layer, wherein the reflective adhesive layer includes at least 30% reflective particles by percentage weight.
16. The light emitting device of claim 15 , wherein the conductive particles are at an interface between the non-reflective adhesive layer and the reflective adhesive layer.
17. The light emitting device of claim 15 , wherein the perturbed conductive particle array is substantially located near the interface or interphase between the reflective layer and non-reflective layer.
18. The light emitting device of claim 15 , wherein the perturbed conductive particle array is substantially located near the chips or electrodes bonded by the ACF.
19. The light-emitting device of claim 15 , wherein the reflective layer comprises about 40 wt. % to about 75 wt. % reflective particles.
20. The light-emitting device of claim 15 , wherein the reflective particles are high refractive index oxides selected from the group consisting of: indium-tin-oxide (ITO), zinc oxide (ZnO), titanium dioxide (TiO 2 ), indium-zinc-oxide (IZO), tin oxide (SnO), zirconium oxide (ZrO 2 ), their alloys thereof, and combinations thereof.
21. The light-emitting device of claim 15 , wherein the reflective particles comprise TiO 2 .
22. The light-emitting device of claim 15 , wherein the reflective layer comprises filler particles selected from the group consisting of: zinc oxide (ZnO), boron nitride (SN), silicon oxide (SiO 2 ), aluminium oxide (Al 2 O 3 ), calcium carbonate (CaCO 3 ), calcium sulfate (CaSO 4 ), barium sulfate (BaSO 4 ), and combinations thereof.
23. The ACF of claim 15 , wherein the ACF further comprises quantum dots in the non-reflective layer, the reflective layer, or both.
24. The light-emitting device of claim 15 , wherein the ACF is at least partially cured.
25. A light-reflecting or transflecting device, comprising:
a housing;
an electrode substrate;
an anisotropic conductive film (ACF) electrically connecting the housing and the electrode substrate, comprising:
a non-reflective adhesive layer including a top surface;
a plurality of conductive particles included with the non-reflective adhesive layer, the conductive particles being substantially in the form of a perturbed array; and
a reflective adhesive layer disposed along the top surface of the non-reflective adhesive layer, wherein the reflective adhesive layer includes at least 30% reflective particles by percentage weight; and
a plurality of chip bumps or thin film transistors in contact with at least a portion of the conductive particles.
26. The light-reflecting or transflecting device of claim 25 , wherein the conductive particles are at an interface between the non-reflective adhesive layer and the reflective adhesive layer.
27. The light-reflecting or transflecting device of claim 25 , wherein the perturbed conductive particle array is substantially located near the interface or interphase between the reflective layer and non-reflective layer.
28. The light-reflecting or transflecting device of claim 25 , wherein the perturbed conductive particle array is substantially located near the chips, thin film transistors, or electrodes bonded by the ACF.
29. The light-reflecting or transflecting device of claim 25 , wherein the reflective layer comprises about 40 wt. % to about 75 wt. % reflective particles.
30. The light-reflecting or transflecting device of claim 25 , wherein the reflective particles are high refractive index oxides selected from the group consisting of: indium-tin-oxide (ITO), zinc oxide (ZnO), titanium dioxide (TiO 2 ), indium-zinc-oxide (IZO), tin oxide (SnO), zirconium oxide (ZrO 2 ), and their alloys thereof.
31. The light-reflecting or transflecting device of claim 25 , wherein the reflective particles comprise TiO 2 .
32. The light-reflecting or transflecting device of claim 25 , wherein the reflective layer comprises filler particles selected from the group consisting of: zinc oxide (ZnO), boron nitride (SN), silicon oxide (SiO 2 ), aluminium oxide (Al 2 O 3 ), calcium carbonate (CaCO 3 ), calcium sulfate (CaSO 4 ), barium sulfate (BaSO 4 ), and combinations thereof.
33. The ACF of claim 25 , wherein the ACF further comprises a quantum dot in the non-reflective layer, the reflective layer, or both.
34. The light-reflecting or transflecting device of claim 25 , wherein the ACF is at least partially cured.