Suspended photonic waveguides with top side sealing
Techniques for forming a photonic device that includes a suspended photonic structure suspended over a silicon substrate are described. A sealed cavity is positioned between the silicon substrate and the photonic structure, and one or more regions of dielectric material act to seal the cavity. Additional structure(s) may be formed on top of the dielectric material.
1. An apparatus comprising:
a photonic structure suspended over a silicon substrate;
a sealed cavity positioned between the silicon substrate and the photonic structure, wherein the sealed cavity is bounded at least in part by the silicon substrate; and
at least one region of dielectric material formed to seal the cavity, wherein the at least one region of dielectric material overlaps with the sealed cavity within a layer that includes the photonic structure.
2. The apparatus of claim 1 , wherein the at least one region of dielectric material is configured as at least one plug for at least one trench that extends from the layer that includes the photonic structure to the cavity.
3. The apparatus of claim 1 , wherein the at least one region of dielectric material encloses at least one gas void separate from the cavity.
4. The apparatus of claim 1 , wherein the photonic structure includes a waveguide and the cavity extends along at least a portion of the waveguide.
5. The apparatus of claim 4 , wherein the at least one region of dielectric material includes a plurality of regions of dielectric material positioned proximate to the waveguide along the length of the waveguide.
6. The apparatus of claim 4 , further comprising a metal layer formed proximate to a side of the waveguide opposite the cavity, wherein the metal layer is configured to provide heat to at least part of the waveguide.
7. The apparatus of claim 1 , further comprising a layer of dielectric material formed proximate to a side of the photonic structure opposite the cavity.
8. The apparatus of claim 1 , wherein the at least one region of dielectric material fills the entire width of at least one trench for at least one location along the at least one trench, wherein the at least one trench extends from the layer that includes the photonic structure to the cavity.
9. The apparatus of claim 8 , wherein the width of the at least one trench at the at least one location is less than 5 μm.
10. The apparatus of claim 1 , further comprising at least one circuit structure positioned on a side of the photonic structure opposite the cavity.
11. The apparatus of claim 10 , further comprising at least one conducting pillar configured to electrically couple to the at least one circuit structure and positioned between the layer that includes the photonic structure and a layer that includes the at least one circuit structure.
12. The apparatus of claim 1 , wherein the photonic structure is an optical mode spot size converter.
13. The apparatus of claim 1 , wherein the photonic structure is a photonic phase shifter.
14. A method for forming a photonic device comprising:
forming a photonic structure over a silicon substrate;
forming at least one trench that extends to the silicon substrate;
removing a portion of the silicon substrate underneath the photonic structure; and
filling, at least partially, the at least one trench with dielectric material to form a sealed cavity between the photonic structure and the silicon substrate, wherein the sealed cavity is bounded at least in part by the silicon substrate.
15. The method of claim 14 , wherein filling the at least one trench with the dielectric material includes depositing the dielectric material at an edge of the at least one trench at a faster rate than the dielectric material fills the cavity.
16. The method of claim 14 , wherein filling the at least one trench with the dielectric material includes depositing the dielectric material by plasma-enhanced chemical vapor deposition.
17. The method of claim 14 , further comprising:
forming a layer of dielectric material over the photonic structure; and
planarizing a surface of the dielectric material.
18. The method of claim 14 , wherein forming the photonic structure includes forming a waveguide, and forming at least one trench includes forming a plurality of trenches proximate to the waveguide and along the length of the waveguide.
19. The method of claim 14 , wherein forming the photonic structure includes forming a waveguide and a metal layer proximate to a side of the waveguide opposite the silicon substrate, wherein the metal layer is configured to provide heat to at least part of the waveguide.
20. The method of claim 14 , further comprising:
forming at least one conducting pillar; and
bonding the at least one conducting pillar to at least one circuit structure of a substrate separate from the silicon substrate.