IP Library Granted Patent US 10,069,139
Granted Patent B2
US 10,069,139 · App. 15/631,816 · Granted Sep 4, 2018

Methods for mass-producing silicon nano powder and graphene-doped silicon nano powder

Inventors: Yanbo Wang (Xenia, OH); Aruna Zhamu (Springboro, OH); Bor Z. Jang (Centerville, OH)
Assignee: Nanotek Instruments, Inc.
H01M4/364H01M4/386H01M4/587H01M2004/027
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Quick Facts
Patent No.
US 10,069,139
App. No.
15/631,816
Granted
Sep 4, 2018
Kind
B2
Abstract

Disclosed is a facile and cost effective method of producing metal-doped nano silicon powder or graphene-doped metal-doped silicon nano powder having a particle size smaller than 100 nm. The method comprises: (a) preparing a silicon precursor/metal precursor/graphene nano composite; (b) mixing the silicon precursor/metal precursor/graphene nano composite with a desired quantity of magnesium; (c) converting the silicon precursor to form a mixture of graphene-doped silicon and a reaction by-product through a thermal and/or chemical reduction reaction; and (d) removing the reaction by-product from the mixture to obtain graphene-doped metal-doped silicon nano powder.

Claims (20)

1. A method of producing graphene-doped silicon nanopowder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a silicon precursor and a powder selected from Au, Ag, Ti, Ni, Cu, Al, Co and combinations thereof to form a silicon precursor/metal powder/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a non-oxidized graphene that is produced without chemical intercalation or oxidation ; (b) mixing the silicon precursor/metal powder/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products by a chemical or thermal reduction reaction; and (d) removing the reaction by-products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.

2. The method of claim 1 , wherein said graphene material is selected from a single-layer sheet or few-layer platelet of pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein few layer is defined as less than 10 layers of graphene planes.

3. The method of claim 1 , wherein said silicon precursor contains tetraethyl orthosilicate (TEOS), sodium silicate, silica, silicon-halogen compound, or a combination thereof, and said reaction by-product contains MgO or a magnesium-halogen compound.

4. The method of claim 1 , wherein said silicon precursor contains silicon fluoride and said reaction by-product contains MgF 2 .

5. The method of claim 1 , wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, removing a liquid component from said hybrid suspension, and/or chemically or thermally converting said hybrid suspension to form said silicon precursor/metal powder/graphene nano composite.

6. The method of claim 1 , wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes nucleation and growth of silicon precursor particles on a graphene surface.

7. The method of claim 1 , wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes (i) dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding a metal powder (iii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iv) drying the gel to form said silicon precursor/metal powder/graphene nano composite.

8. The method of claim 7 , wherein the alkaline chemical is selected from ammonia water, sodium hydroxide solution, potassium hydroxide solution, lithium hydroxide solution, or a combination thereof.

9. The method of claim 7 wherein said step of drying includes spray drying or fluidized bed drying.

10. The method of claim 1 , wherein said step (b) of mixing said silicon precursor/metal powder/graphene nano composite with a quantity of magnesium includes liquid solution mixing, melt mixing, grinding, mechanical milling, air milling, or ball-milling.

11. The method of claim 1 , wherein the step (d) of removing said reaction by-product from the mixture comprises etching the reaction product by an acid solution.

12. The method of claim 1 , further comprising filtration, washing, and/or drying after step (d).

13. The method of claim 1 further comprising a heating process to purify said graphene-doped metal-doped silicon nano powder or to remove graphene, forming metal-doped silicon nano powder.

14. The method of claim 1 , wherein the step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000° C. under an Ar/H 2 atmosphere.

15. The method of claim 14 , wherein said graphene-doped metal-doped silicon has a nanowire morphology.

16. A method of producing graphene-doped silicon nano powder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a chemical precursor of silicon and a chemical precursor of a metal selected from the group Au, Ag, Al, Cu, Ti, Ni, Co, and combinations thereof, to create a silicon precursor/metal precursor/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a non-oxidized graphene that is produced without chemical intercalation or oxidation ; (b) mixing the silicon precursor/metal precursor/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal precursor/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products by a chemical or thermal reduction reaction; and (d) removing the reaction by-products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.

17. The process of claim 16 , wherein said chemical precursor of a metal is selected from the group titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid, and combinations thereof.

18. The method of claim 16 , wherein said step (a) of preparing said silicon precursor/metal precursor/graphene nano composite includes (i) dispersing or dissolving a silicon precursor and a metal precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iii) drying said gel to form said silicon precursor/metal precursor/graphene nano composite.

19. The method of claim 16 , wherein said step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000° C. under an Ar/H 2 atmosphere.

20. The method of claim 19 , wherein said graphene-doped metal-doped silicon has a nanowire morphology.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2024
From: GLOBAL GRAPHENE GROUP, INC.
To: HONEYCOMB BATTERY COMPANY
Reel/Frame 066957/0745 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 20, 2019
From: NANOTEK INSTRUMENTS, INC.
To: GLOBAL GRAPHENE GROUP, INC.
Reel/Frame 050444/0315 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2017
From: ZHAMU, ARUNA; JANG, BOR Z
To: NANOTEK INSTRUMENTS, INC.
Reel/Frame 043167/0735 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2017
From: WANG, YANBO
To: NANOTEK INSTRUMENTS, INC.
Reel/Frame 043171/0512 →
Continuity (2)
Division 13987450 · Jul 26, 2013
Related Publication 20170294647A1 · Oct 12, 2017
Cited By (9)
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