Perpendicular magnetic tunnel junction devices with high thermal stability

1. A perpendicular magnetic tunnel junction device (pMTJ) comprising:

a first heavy metal layer;

a first thin dusting layer on the first heavy metal layer;

a first CoFeB layer on the first thin dusting layer;

a MgO barrier layer on the first CoFeB layer;

a second CoFeB layer on the MgO barrier layer;

a second thin dusting layer on the second CoFeB layer; and

a second heavy metal layer on the thin dusting layer.

2. The pMTJ of claim 1 , wherein the first heavy metal and the second heavy metal layer are each selected from the group consisting of Ru, Ta, Pt, W, Mo, Nb, Hf, Ir, Zr, Cr, Re, Ti and alloys of Ru, Ta, Pt, W, Mo, Nb, Hf, Ir, Zr, Cr, Re, and Ti.

3. The pMTJ of claim 1 , wherein the first thin dusting layer and the second thin dusting layer are each selected from the group consisting of Mo, W, Zr, Nb, Ir and alloys of Mo, W, Zr, Nb and Ir.

4. The pMTJ of claim 1 , wherein the thickness of the first thin dusting layer is between 0.1-0.9 nm; and the thickness of the second thin dusting layer is between 0.1-0.9 nm.

5. The pMTJ of claim 1 , wherein the first thin dusting layer and the second thin dusting layer each comprise Mo.

6. A highly thermal stable magnetic random access memory (MRAM) unit comprising:

at least one perpendicular magnetic tunnel junction device (pMTJ), the pMTJ comprising:

a first heavy metal layer;

a first thin dusting layer on the first heavy metal layer;

a first CoFeB layer on the first thin dusting layer;

a MgO barrier layer on the first CoFeB layer;

a second CoFeB layer on the MgO barrier layer;

a second thin dusting layer on the second CoFeB layer; and

a second heavy metal layer on the thin dusting layer.

7. The MRAM unit of claim 6 , wherein the first heavy metal and the second heavy metal layer are each selected from the group consisting of Ta, Ru, Pt and alloys of Ta, Ru and Pt.

8. The MRAM unit of claim 6 , wherein the first thin dusting layer and the second thin dusting layer are each selected from the group consisting of Mo, W, Zr, Nb, Ir and alloys of Mo, W, Zr, Nb and Ir.

9. The MRAM unit of claim 6 , wherein the thickness of the first thin dusting layer is between 0.1-0.9 nm; and the thickness of the second thin dusting layer is between 0.1-0.9 nm.

10. The MRAM unit of claim 6 , wherein the first thin dusting layer and the second thin dusting layer each comprises Mo.

11. A method of fabricating a pMTJ, the method comprising:

forming a first heavy metal layer;

forming a first dusting layer on the first heavy metal layer;

forming a first CoFeB layer on the first dusting layer;

forming a MgO barrier layer on the first CoFeB layer;

forming a second CoFeB layer on the MgO barrier layer;

forming a second dusting layer on the second CoFeB layer;

forming a second heavy metal layer on the second dusting layer; and

annealing the pMTJ.

12. The method of claim 11 , wherein the first heavy metal and the second heavy metal layer are each selected from the group consisting of Ru, Ta, Pt, W, Mo, Nb, Hf, Ir, Zr, Cr, Re, Ti and alloys of Ru, Ta, Pt, W, Mo, Nb, Hf, Ir, Zr, Cr, Re, and Ti.

13. The method of claim 11 , wherein the first dusting layer and the second dusting layer are each selected from the group consisting of Mo, W, Zr, Nb, Ir and alloys of Mo, W, Zr, Nb and Ir.

14. The method of claim 11 , wherein the first dusting layer is formed to a thickness of between 0.1-0.9 nm; and the second dusting layer is formed to a thickness of between 0.1-0.9 nm.

15. The method of claim 11 , wherein the first dusting layer and the second dusting layer each comprise Mo.