Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
A substrate support for a substrate processing system includes a baseplate, a bond layer provided on the baseplate, and a ceramic layer arranged on the bond layer. The ceramic layer includes a first region and a second region located radially outward of the first region, the first region has a first thickness, the second region has a second thickness, and the first thickness is greater than the second thickness.
1. A substrate support for a substrate processing system, the substrate support comprising:
a baseplate;
a bond layer provided on the baseplate; and
a ceramic layer arranged on the bond layer, wherein
the ceramic layer includes a first region and a second region located radially outward of the first region,
the first region has a first thickness,
the second region has a second thickness such that a lower surface of the ceramic layer steps upward from the first region to the second region, and
the first thickness is greater than the second thickness,
wherein the baseplate includes heat transfer gas supply holes arranged to supply heat transfer gas to an underside of the ceramic layer, and wherein the heat transfer gas supply holes are configured for fluid communication with a heat transfer gas source, and
wherein the heat transfer gas supply holes are arranged directly under an outer edge of the second region but not under the first region.
2. The substrate support of claim 1 , wherein the first region corresponds to a center region of the ceramic layer and the second region corresponds to an annular region surrounding the center region.
3. The substrate support of claim 1 , wherein the first thickness is greater than 2 millimeters and the second thickness is less than 2 millimeters.
4. The substrate support of claim 1 , wherein the ceramic layer includes a third region located between the first region and the second region.
5. The substrate support of claim 4 , wherein the third region corresponds to a transition region having a third thickness that varies between the first region and the second region.
6. The substrate support of claim 4 , wherein the third region is one of stepped, chamfered, and curved.
7. The substrate support of claim 1 , wherein the ceramic layer includes a ceramic disk and a ceramic plate arranged on the ceramic disk.
8. The substrate support of claim 7 , further comprising a second bond layer provided between the ceramic disk and the ceramic plate.
9. The substrate support of claim 7 , wherein the ceramic disk and an inner portion of the ceramic plate correspond to the first region, and wherein the ceramic disk and the inner portion of the ceramic plate define the first thickness.
10. The substrate support of claim 9 , wherein an outer portion of the ceramic plate corresponds to the second region, and wherein the outer portion of the ceramic plate defines the second thickness.
11. The substrate support of claim 7 , wherein the ceramic plate comprises a first material and the ceramic disk comprises a second material.
12. A substrate support for a substrate processing system, the substrate support comprising:
a baseplate;
a bond layer provided on the baseplate;
a ceramic layer arranged on the bond layer; and
a dielectric filler layer provided between the baseplate and the ceramic layer, wherein
the ceramic layer includes an inner portion and an outer portion,
the dielectric filler layer and the inner portion of the ceramic layer define a first region,
the outer portion of the ceramic layer defines a second region located radially outward of the first region,
the first region has a first thickness,
the second region has a second thickness such that a lower surface of the ceramic layer steps upward from the first region to the second region, and
the first thickness is greater than the second thickness,
wherein the baseplate includes heat transfer gas supply holes arranged to supply heat transfer gas to an underside of the ceramic layer, and wherein the heat transfer gas supply holes are configured for fluid communication with a heat transfer gas source, and
wherein the heat transfer gas supply holes are arranged directly under an outer edge of the second region but not under the first region.
13. The substrate support of claim 12 , wherein the first thickness is greater than 2 millimeters and the second thickness is less than 2 millimeters.
14. The substrate support of claim 12 , wherein the ceramic layer and the dielectric filler layer define a third region located between the first region and the second region.
15. The substrate support of claim 14 , wherein the third region corresponds to a transition region having a third thickness that varies between the first region and the second region.
16. The substrate support of claim 14 , wherein the third region is one of stepped, chamfered, and curved.