Methods for fabricating electronic devices including substantially hermetically sealed cavities and getter films

1. A method for fabricating an electronic device, the method comprising:

activating a getter film that is in fluid communication with a substantially hermetically sealed cavity in an electronic device body structure of the electronic device to form an activated getter film; and

determining a resistance of the activated getter film.

2. The method of claim 1 , further comprising determining a first resistance (R 1 ) of the getter film before activating the getter film, and wherein determining the resistance of the activated getter film comprises:

determining a second resistance (R 2 ) of the activated getter film initially after activating the getter film, and wherein the method further comprises:

comparing R 2 with R 1 to determine if the activated getter film can effectively absorb and/or adsorb gas to produce and/or maintain the vacuum condition in the substantially hermetically sealed cavity.

3. The method of claim 2 , wherein comparing R 2 with R 1 comprises determining that the activated getter film can effectively absorb and/or adsorb gas when R 2 >R 1 .

4. The method of claim 2 , wherein determining R 1 comprises;

applying a first static current I 1 to the getter film and measuring in response a first voltage V 1 ; and

calculating R 1 using the relationship R 1 =V 1 /I 1 , and wherein determining R 2 comprises:

applying a second static current I 2 to the activated getter film and measuring in response a second voltage V 2 ; and

calculating R 2 using the relationship R 2 =V 2 /I 2 .

5. The method of claim 2 , wherein determining the resistance of the activated getter film comprises:

determining a third resistance (R 3 ) of the activated getter film after making measurements for determining R 2 , and wherein comparing R 2 with R 1 further comprises comparing R 2 with R 3 .

6. The method of claim 5 , wherein comparing R 1 , R 2 , and R 3 comprises determining that the activated getter film can effectively absorb and/or adsorb gas when R 3 >R 2 >R 1 .

7. The method of claim 5 , wherein determining R 2 comprises measuring an initial electrical response from an initial electrical input to the activated getter film, and wherein determining R 3 comprises;

measuring a subsequent electrical response from a subsequent electrical input to the activated getter film at a time of from about 5 to about 60 minutes after measuring the initial electrical response; and

using the subsequent electrical response for determining R 3 .

8. A method for fabricating an electronic device, the method comprises:

forming a getter film overlying a first portion of an electronic device body structure;

forming conductive features extending through the first portion of the electronic device body structure for operatively coupling the conductive features with the getter film for electrical communication with the getter film;

sealing the first portion of the electronic device body structure with a second portion of the electronic device body structure to form a substantially hermetically sealed cavity in the electronic device body structure such that the getter film is in fluid communication with the substantially hermetically sealed cavity and the conductive features are accessible from outside the substantially hermetically sealed cavity;

heating the electronic device body structure including the getter film after sealing the first portion with the second portion to activate the getter film to form an activated getter film for effectively absorbing and/or adsorbing gas to produce and/or maintain a vacuum condition in the substantially hermetically sealed cavity; and

using the conductive features, determining a resistance of the activated getter film.

9. The method of claim 8 , wherein the first portion of the electronic device body structure has an outer surface and an inner surface that is on a side opposite the outer surface and that at least in part defines the substantially hermetically sealed cavity, wherein forming the getter film comprises forming the getter film overlying the inner surface of the first portion.

10. The method of claim 9 , wherein forming the conductive features comprises forming conductive vias extending between the inner and outer surfaces of the first portion for electrically coupling to the getter film.

11. The method of claim 10 , wherein forming the conductive features comprises forming conductive pads overlying the outer surface of the first portion electrically coupled to the conductive vias.

12. The method of claim 8 , further comprising, using the conductive features, determining a first resistance (R 1 ) of the getter film after sealing the first portion with the second portion and before heating the electronic device body structure, and wherein determining the resistance of the activated getter film comprises:

using the conductive features, determining a second resistance (R 2 ) of the activated getter film after activating the getter film, and wherein the method further comprises:

comparing R 2 with R 1 to determine if the activated getter film can effectively absorb and/or adsorb gas to produce and/or maintain the vacuum condition in the substantially hermetically sealed cavity.

13. The method of claim 1 , wherein determining the resistance comprises determining the resistance for evaluating if the activated getter film can effectively absorb and/or adsorb gas to produce and/or maintain a vacuum condition in the substantially hermetically sealed cavity.

14. The method of claim 2 , wherein determining the resistance of the activated getter film comprises determining that the resistance (R 2 ) of the activated getter film is equal to or relatively lower than the first resistance (R 1 ) of the getter film before activating the getter film.

15. The method of claim 14 , further comprising determining that the activated getter film is unacceptable and cannot sufficiently absorb and/or adsorb gases.

16. The method of claim 14 , further comprising identifying the electronic device as a problematic die and excluding the electronic device from further processing along a processing line.

17. The method of claim 2 , wherein determining the resistance of the activated getter film comprises determining that the resistance (R 2 ) is at least 0.5 ohms/m 2 greater than the resistance (R 1 ).

18. The method of claim 17 , wherein determining the first resistance (R 1 ) of the getter film before activating the getter film comprises determining the first resistance (R 1 ) of the getter film before activating to be less than 0.5 ohms per square meter (ohms/m 2 ) and wherein determining the second resistance (R 2 ) of the activated getter film comprises determining the second resistance (R 2 ) of the activated getter film after activation to be from about 1 to about 1.5 ohms/m 2 .

19. The method of claim 17 , further comprising advancing the electronic device along a processing line for further processing after determining the resistance of the activated getter film (R 2 ) to be at least 0.5 ohms/m 2 greater than the resistance (R 1 ).

20. The method of claim 2 , wherein determining the resistance (R 1 ) of the getter film before activating the getter film comprises determining the resistance (R 1 ) of the getter film prior to forming the substantially hermetically sealed cavity.