IP Library Granted Patent US 10,163,602
Granted Patent B2
US 10,163,602 · App. 15/635,500 · Granted Dec 25, 2018

Ion beam system

Inventors: Hiroyasu Shichi (Tokyo, JP); Shinichi Matsubara (Tokyo, JP); Yoshimi Kawanami (Tokyo, JP)
Assignee: Hitachi High-Tech Science Corporation
H01J37/08H01J37/18H01J37/261H01J2237/0807
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Quick Facts
Patent No.
US 10,163,602
App. No.
15/635,500
Granted
Dec 25, 2018
Kind
B2
Abstract

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

Claims (59)

1. An ion beam system comprising:

a gas field ionization ion source which includes:

a vacuum vessel;

an emitter tip holder disposed in the vacuum vessel;

an emitter tip connected to the emitter tip holder;

an extraction electrode opposed to the emitter tip;

a gas supply portion for supplying a gas to the emitter tip; and

a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder,

wherein a heat insulating material covers an outer surface of the cold transfer member in order to prevent condensation of the gas.

2. The ion beam system according to claim 1 ,

wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof.

3. The ion beam system according to claim 1 ,

wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics.

4. The ion beam system according to claim 1 ,

wherein the gas is a gas containing any one of neon, argon, krypton and xenon.

5. The ion beam system according to claim 1 ,

wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen.

6. The ion beam system according to claim 1 ,

wherein the gas supply portion supplies a gas mixture of krypton gas and other gas or supplies the krypton gas and the other gas by switching between these gases, and

the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 60K.

7. The ion beam system according to claim 1 ,

wherein the gas supply portion supplies a gas mixture of argon gas and helium gas or a gas mixture of argon gas and hydrogen gas, and

the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 45K.

8. An ion beam system comprising:

a gas field ionization ion source which includes:

a vacuum vessel;

an emitter tip holder disposed in the vacuum vessel;

an emitter tip connected to the emitter tip holder;

an extraction electrode opposed to the emitter tip;

a gas supply portion for supplying a gas to the emitter tip; and

a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder,

the system further comprising:

an adhesion member covering an outer surface of the cold transfer member; and

a heat insulating material adhered to the outer surface of the cold transfer member via the adhesion member, and covering the adhesion member.

9. The ion beam system according to claim 8 ,

wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof.

10. The ion beam system according to claim 8 ,

wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics.

11. The ion beam system according to claim 8 ,

wherein the gas is a gas containing any one of neon, argon, krypton and xenon.

12. The ion beam system according to claim 8 ,

wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen.

13. The ion beam system according to claim 8 ,

wherein the gas supply portion supplies a gas mixture of krypton gas and other gas or supplies the krypton gas and the other gas by switching between these gases, and

the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 60K.

14. The ion beam system according to claim 8 ,

wherein the gas supply portion supplies a gas mixture of argon gas and helium gas or a gas mixture of argon gas and hydrogen gas, and

the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 45K.

15. An ion beam system comprising:

a gas field ionization ion source which includes:

a vacuum vessel; an emitter tip holder disposed in the vacuum vessel;

an emitter tip connected to the emitter tip holder;

an extraction electrode opposed to the emitter tip;

a gas supply portion for supplying a gas to the emitter tip; and

a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder,

the system further comprising:

a heat insulating material covering an outer surface of the cold transfer member;

a metal material covering an outer surface of the heat insulating material; and

a heating mechanism for heating the metal material.

Assignments (3)
CHANGE OF ADDRESS Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 072903/0555 →
CHANGE OF NAME Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH ANALYSIS CORPORATION
Reel/Frame 072903/0648 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 10, 2018
From: SHICHI, HIROYASU; MATSUBARA, SHINICHI; KAWANAMI, YOSHIMI
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 045490/0546 →
Priority Claims (1)
JP 2016-133700 · Jul 5, 2016 · national
Continuity (1)
Related Publication 20180012726A1 · Jan 11, 2018