IP Library › Granted Patent US 10,116,348
Granted Patent B2
US 10,116,348 · App. 15/635,710 · Granted Oct 30, 2018

High-frequency power amplifying module and communication apparatus

Inventors: Hidenori Obiya (Kyoto, JP); Shinya Hitomi (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H04B1/525H04B1/006H04B1/0057H04B1/0078H04B1/04
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Quick Facts
Patent No.
US 10,116,348
App. No.
15/635,710
Granted
Oct 30, 2018
Kind
B2
Abstract

A high-frequency power amplifying module is provided for a communication device that simultaneously uses at least a radio wave in a first band and a radio wave in a second band, and a first high-frequency power amplifier for the first band and a second high-frequency power amplifier for the second band are mounted. The first band and the second band are frequency bands that produce intermodulation distortion of a frequency included in the receive frequency band of the second band, due to a transmit frequency of the first band received by the first high-frequency power amplifier and a transmit frequency of the second band received h the second high-frequency power amplifier. The second high-frequency power amplifier includes a filter that blocks a signal at the transmit frequency of the first band.

Claims (53)

1. A high-frequency power amplifying module for a communication device that simultaneously transmits and receives radio frequency signals in a first communication band and a second communication band, the high-frequency power amplifying module comprising:

a first high-frequency power amplifier that amplifies radio frequency signals in the first communication band, the first high-frequency power amplifier comprising a second transmission filter configured to attenuate a transmission frequency of the second communication band; and

a second high-frequency power amplifier that amplifies radio frequency signals in the second communication band, the second high-frequency power amplifier comprising a first transmission filter, a second upstream amplifier, and a second downstream amplifier,

wherein the first communication band and the second communication band produce intermodulation distortion due to the transmission frequency of the first communication band and a transmission frequency of the second communication band, the intermodulation distortion having a frequency within a reception frequency band of the second communication band,

wherein the first transmission filter is configured to attenuate the transmission frequency of the first communication band,

wherein the second upstream amplifier amplifies a transmission signal in the second communication band,

wherein the first transmission filter is disposed between the second upstream amplifier and the second downstream amplifier,

wherein the second downstream amplifier amplifies a signal having passed through the first transmission filter,

wherein the first transmission filter, the second upstream amplifier, and the second downstream amplifier are mounted on a single board, and

wherein the first transmission filter and the second transmission filter are formed as a single high-frequency power amplifying module that is different from a high-frequency circuit that is coupled to the high-frequency power amplifying module.

2. The high-frequency power amplifying module according to claim 1 ,

wherein the first high-frequency power amplifier further comprises a first upstream amplifier and a first downstream amplifier,

wherein the first upstream amplifier amplifies a transmission signal in the first communication band,

wherein the second transmission filter is disposed between the first upstream amplifier and the first downstream amplifier, and

wherein the first downstream amplifier amplifies a signal having passed through the second transmission filter.

3. The high-frequency power amplifying module according to claim 1 ,

wherein the second high-frequency power amplifier further comprises a reception filter configured to attenuate the reception frequency band of the second communication band.

4. The high-frequency power amplifying module according to claim 3 ,

wherein the first transmission filter and the reception filter are both embodied as a single variable frequency filter.

5. The high-frequency power amplifying module according to claim 3 ,

wherein the first transmission filter and the reception filter are both embodied as a single fixed frequency filter.

6. The high-frequency power amplifying module according to claim 1 ,

wherein the first communication band comprises frequencies greater than the second communication band.

7. The high-frequency power amplifying module according to claim 1 ,

wherein the first high-frequency power amplifier is disposed at a distance from the second high-frequency power amplifier, the distance corresponding to an isolation of −70 dB or less.

8. The high-frequency power amplifying module according to claim 1 ,

wherein the first high-frequency power amplifier and the second high-frequency power amplifier have a common power supply path, and

the high-frequency power amplifying module further comprises a filter that is inserted in the common power supply path and that attenuates the transmission frequency of the first communication band.

9. The high-frequency power amplifying module according to claim 8 , further comprising:

a bypass circuit that transmits a signal through a path that does not go through the filter.

10. A communication apparatus comprising:

the high-frequency power amplifying module according to claim 1 .

11. A high-frequency power amplifying module for a communication device that simultaneously transmits and receives radio frequency signals in a first communication band and a second communication band, the high-frequency power amplifying module comprising:

a first high-frequency power amplifier that amplifies radio frequency signals in the first communication band; and

a second high-frequency power amplifier that amplifies radio frequency signals in the second communication band, the second high-frequency power amplifier comprising a first transmission filter, a second upstream amplifier, and a second downstream amplifier,

wherein the first communication band and the second communication band produce intermodulation distortion due to a transmission frequency of the first communication band and a transmission frequency of the second communication band, the intermodulation distortion having a frequency within a reception frequency band of the second communication band,

wherein the first transmission filter is configured to attenuate the transmission frequency of the first communication band,

wherein the second upstream amplifier amplifies a transmission signal in the second communication band,

wherein the first transmission filter is disposed between the second upstream amplifier and the second downstream amplifier,

wherein the second downstream amplifier amplifies a signal having passed through the first transmission filter,

wherein the second high-frequency power amplifier further comprises a reception filter configured to attenuate the reception frequency band of the second communication band, and

wherein the first transmission filter and the reception filter are disposed between the second upstream amplifier and the second downstream amplifier.

12. A high-frequency power amplifying module for a communication device that simultaneously transmits and receives radio frequency signals in a first communication band and a second communication band, the high-frequency power amplifying module comprising:

a first high-frequency power amplifier that amplifies radio frequency signals in the first communication band; and

a second high-frequency power amplifier that amplifies radio frequency signals in the second communication band, the second high-frequency power amplifier comprising a first transmission filter, a second upstream amplifier, and a second downstream amplifier,

wherein the first communication band and the second communication band produce intermodulation distortion due to a transmission frequency of the first communication band and a transmission frequency of the second communication band, the intermodulation distortion having a frequency within a reception frequency band of the second communication band,

wherein the first transmission filter is configured to attenuate the transmission frequency of the first communication band,

wherein the second upstream amplifier amplifies a transmission signal in the second communication band,

wherein the first transmission filter is disposed between the second upstream amplifier and the second downstream amplifier,

wherein the second downstream amplifier amplifies a signal having passed through the first transmission filter,

wherein the second high-frequency power amplifier further comprises a reception filter configured to attenuate the reception frequency band of the second communication band,

wherein the first transmission filter is disposed between the second upstream amplifier and the second downstream amplifier, and

wherein the reception filter is coupled downstream of the second downstream amplifier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 28, 2017
From: OBIYA, HIDENORI; HITOMI, SHINYA
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 042851/0863 →
Priority Claims (2)
JP 2015-009832 · Jan 21, 2015 · national
JP 2015-099996 · May 15, 2015 · national
Continuity (2)
Continuation PCTJP2016051202 · Jan 18, 2016
Related Publication 20170302328A1 · Oct 19, 2017