Memory access method, storage-class memory, and computer system

1. A computer system, wherein the computer system comprises a memory controller and a hybrid memory, wherein the hybrid memory comprises a dynamic random access memory (DRAM) and a storage-class memory (SCM), wherein

the memory controller is configured to send a first access instruction to the DRAM and the SCM, wherein the first access instruction carries a first address addressing a first memory cell set of the DRAM;

the DRAM is configured to access a memory cell in the first memory cell set according to the first access instruction; and

the SCM is configured to:

receive the first access instruction sent by the memory controller;

determine that the first memory cell set comprises a memory cell with retention time shorter than a refresh cycle of the DRAM, wherein the refresh cycle of the DRAM is longer than a standard refresh cycle;

obtain a second address addressing a second memory cell set of the SCM, the second address having a mapping relationship with the first address;

convert the first access instruction into a second access instruction according to the second address, wherein the second access instruction comprises the second address; and

access a memory cell in the second memory cell set according to the second access instruction.

2. The computer system according to claim 1 , wherein the first address is stored in a content addressable memory (CAM), wherein the first memory cell set comprising the memory cell with retention time shorter than the refresh cycle of the DRAM is determined according to the first address, wherein the CAM stores one or more addresses of one or more memory cells in the DRAM, the one or more memory cells having retention time shorter than the refresh cycle of the DRAM, the one or more addresses including the first address, wherein the mapping relationship is stored in the CAM, wherein the second address is obtained according to the first address and the mapping relationship, wherein the memory cell in the first memory cell set of the DRAM and the memory cell in the second memory cell set of the SCM are configured to store same data.

3. The computer system according to claim 1 , wherein:

the memory controller is further configured to send a third access instruction to the DRAM and the SCM, wherein the third access instruction carries a third address addressing a third memory cell set of the DRAM;

the DRAM is further configured to access a memory cell in the third memory cell set according to the third access instruction; and

the SCM is further configured to:

receive the third access instruction sent by the memory controller; and

delete the third access instruction when the third memory cell set does not comprise a memory cell whose retention time is shorter than the refresh cycle of the DRAM.

4. The computer system according to claim 3 , wherein the hybrid memory further comprises:

a multiplexer MUX, configured to: output, to the memory controller, data stored in the memory cell in the second memory cell set of the SCM when the first access instruction is a read instruction.

5. The computer system according to claim 4 , wherein the multiplexer MUX is further configured to:

output, to the memory controller, data stored in the memory cell in the third memory cell set of the DRAM when the third access instruction is a read instruction.

6. The computer system according to claim 1 , wherein a total storage capacity of the memory cell in the second memory cell set is not less than a total storage capacity of the memory cell in the first memory cell set.

7. A storage-class memory (SCM) in a hybrid memory of a computer system, wherein the hybrid memory comprises a dynamic random access memory (DRAM) having a refresh cycle longer than a standard refresh cycle, and wherein the SCM comprises:

an SCM controller, configured to

receive a first access instruction sent by a memory controller of the computer system, wherein the first access instruction carries a first address addressing a first memory cell set of the DRAM, and

convert the first access instruction into a second access instruction according to a second address having a mapping relationship with the first address when the first memory cell set comprises a memory cell whose retention time is shorter than the refresh cycle of the DRAM, wherein the second address addressing a second memory cell set of the SCM, and

access a memory cell in the second memory cell set of the SCM according to the second access instruction, wherein the second access instruction comprises the second address;

a content addressable memory (CAM), configured to

obtain the second address.

8. The SCM according to claim 7 , wherein the first address is prestored in the CAM, wherein one or more addresses addressing one or more memory cells in the DRAM, the one or more memory cells having retention time shorter than the refresh cycle of the DRAM, the one or more addresses including the first address, wherein the second address is obtained according to the first address and the mapping relationship, and wherein the CAM is further configured to:

determine, according to the first address, that the first memory cell set comprises a memory cell whose retention time is shorter than the refresh cycle of the DRAM,

wherein a memory cell in the first memory cell set addressed by the first address in the DRAM and the memory cell in the second memory cell set addressed by the second address in SCM are configured to store same data.

9. The SCM according to claim 7 , wherein:

the SCM controller is further configured to receive a third access instruction sent by the memory controller, wherein the third access instruction carries a third address addressing a third memory cell set of the DRAM;

the CAM is further configured to determine, according to the third address, that the third memory cell set does not comprise a memory cell whose retention time is shorter than the refresh cycle of the DRAM; and

the SCM controller is further configured to delete the third access instruction.

10. The SCM according to claim 7 , wherein the hybrid memory further comprises a multiplexer MUX, and the CAM is further configured to:

send a first instruction signal to the MUX in the hybrid memory to instruct the MUX to output data stored in the SCM to the memory controller, wherein the first access instruction is a read instruction, and wherein the first instruction signal is sent after it is determined that the first memory cell set comprises a memory cell whose retention time is shorter than the refresh cycle of the DRAM.

11. The computer system according to claim 7 , wherein a total storage capacity of the memory cell in the second memory cell set is not less than a total storage capacity of the memory cell in the first memory cell set.

12. A memory access method for a computer system with a hybrid memory, wherein the hybrid memory comprises a dynamic random access memory (DRAM) and a storage-class memory (SCM), and wherein the method is performed by the SCM and comprises:

receiving a first access instruction sent by a memory controller of the computer system, wherein the first access instruction carries a first address addressing a first memory cell set of the DRAM;

converting the first access instruction into a second access instruction according to a second address having a mapping relationship with the first address, wherein the first memory cell set comprises a memory cell with retention time shorter than the refresh cycle of the DRAM, wherein the refresh cycle of the DRAM is longer than a standard refresh cycle, wherein the second access instruction comprises the second address, and wherein the second address addressing a second memory cell set of the SCM; and

accessing a memory cell in the second memory cell set according to the second access instruction.

13. The method according to claim 12 , wherein the first address is stored in a content addressable memory (CAM), wherein the first memory cell set comprising the memory cell with retention time shorter than the refresh cycle of the DRAM is determined according to the first address,

wherein the CAM stores one or more addresses of one or more memory cells in the DRAM, the one or more memory cells having retention time shorter than the refresh cycle of the DRAM, the one or more addresses including the first address.

14. The method according to claim 13 , wherein the second address is obtained according to the first address and a mapping relationship between the first address and the second address, wherein the mapping relationship is stored in the CAM, wherein a memory cell in the first memory cell set addressed by the first address in the DRAM and the memory cell in the second memory cell set addressed by the second address in the SCM are configured to store same data.

15. The method according to claim 12 , wherein the method further comprises:

receiving a third access instruction sent by the memory controller, wherein the third access instruction carries a third address addressing a third memory cell set of the DRAM, wherein the third memory cell set does not comprise a memory cell whose retention time is shorter than the refresh cycle of the DRAM; and

deleting the third access instruction.

16. The method according to claim 12 , wherein the method further comprises:

send a first instruction signal to a multiplexer MUX in the hybrid memory to instruct the MUX to output data stored in the SCM to the memory controller, wherein the first access instruction is a read instruction, and wherein the first instruction signal is sent after it is determined that the first memory cell set comprises a memory cell with retention time shorter than the refresh cycle of the DRAM.

17. The method according to claim 12 , wherein a total storage capacity of the memory cell in the second memory cell set is not less than a total storage capacity of the memory cell in the first memory cell set.