I/O layout footprint for multiple 1LM/2LM configurations
An apparatus is described. The apparatus includes a package on package structure. The package on package structure includes an upper package and a lower package. One of the packages contain memory devices of a first type and the other of the packages contain memory devices of a second type. I/O connections on the underside of the upper package's substrate are vertically aligned with their corresponding, first I/O connections on the underside of the lower package's substrate. The first I/O connections are located outside second I/O connections on the underside of the lower package's substrate for the lower package.
1. An apparatus, comprising:
a package on package structure comprising an upper package and a lower package, one of the packages containing memory devices of a first type and the other of the packages containing memory devices of a second type, wherein, I/O connections on the underside of the upper package's substrate are vertically aligned with their corresponding, first I/O connections on the underside of the lower package's substrate, the first I/O connections located outside second I/O connections on the underside of the lower package's substrate for the lower package, and wherein, a distance between those of the I/O connections located on opposite sides of the lower package is less than twice a width of an encapsulated die within the lower package, wherein the memory devices of the first type are stacked and the memory devices of the second type are stacked.
2. The apparatus of claim 1 wherein the memory devices of the first type comprise DRAM.
3. The apparatus of claim 1 wherein the memory devices of the second type are non-volatile.
4. The apparatus of claim 3 wherein the memory devices of the second type comprise any of:
a three dimensional cross point memory;
a phase change memory;
a magnetic memory;
a ferroelectric memory;
a resistive memory;
a spin transfer torque memory;
an Ovshinsky memory;
chalcogenide.
5. The apparatus of claim 3 wherein the memory devices of the second type are integrated in their respective one of the packages with a controller.
6. The apparatus of claim 1 wherein the upper package contains non-volatile memory devices and the lower package contains DRAM devices.
7. The apparatus of claim 1 wherein the first I/O connections on the underside of the lower package's substrate for the upper package and the second I/O connections on the underside of the other package's substrate are compatible with an industry standard system memory channel.
8. An apparatus, comprising:
a system substrate comprising a pad layout footprint, said pad layout footprint comprising outer pads to couple to an upper package of a package-on-package structure, said pad layout footprint comprising inner pads that remain within said outer pads, said inner pads to couple to a lower package of the package-on-package structure, wherein, said outer pads contain wiring of a first system memory channel, and, said inner pads contain wiring of said first system memory channel or a second system memory channel.
9. The apparatus of claim 8 wherein said system substrate is a motherboard of a computing system.
10. The apparatus of claim 8 wherein said system substrate is a substrate for a multi-chip module.
11. The apparatus of claim 8 wherein said system substrate is a DIMM substrate.
12. The apparatus of claim 8 further comprising only a lower package coupled to said pad layout footprint.
13. The apparatus of claim 8 further comprising only an upper package coupled to said pad layout footprint.
14. A computing system, comprising:
one or more processing cores;
a memory controller;
a system substrate comprising a pad layout footprint, said pad layout footprint comprising outer pads to couple to an upper package of a package-on-package structure, said pad layout footprint comprising inner pads that remain within said outer pads, said inner pads to couple to a lower package of the package-on-package structure, wherein, said outer pads contain wiring of a first system memory channel that is coupled to said memory controller, and, said inner pads contain wiring of said first system memory channel or a second system memory channel that is coupled to said memory controller.
15. The computing system of claim 14 wherein said system substrate is a motherboard of a computing system.
16. The computing system of claim 14 wherein said system substrate is a substrate for a multi-chip module.
17. The computing system of claim 14 wherein said system substrate is a DIMM substrate.
18. The computing system of claim 14 further comprising only a lower package or only an upper package coupled to said pad layout footprint.
19. The computing system of claim 14 further comprising the package on package structure coupled to said pad layout footprint, one of the packages containing memory devices of a first type and the other of the packages containing memory devices of a second type, wherein, I/O connections on the underside of the upper package's substrate are vertically aligned with the outer pads.