High-efficiency and durable optoelectronic devices using layered 2D perovskites
A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.
1. A thin film for an optoelectronic device, the thin film comprising a layered 2D perovskite material comprising two or more inorganic perovskite layers, the thin film comprising the layered 2D perovskite material comprising a substantially single-crystalline uniform thin film,
the layered 2D perovskite material being represented by (BA) 2 (MA) n−1 Pb n I 3n+1 , wherein BA is an n-butyl ammonium cation and MA is a methyl ammonium cation.
2. The thin film of claim 1 , wherein n is 3 or 4.
3. The thin film of claim 1 , wherein the thin film has a thickness of 100 nm to 900 nm.
4. An optoelectronic device comprising:
a substrate layer,
a thin film including a layered 2D perovskite on the substrate layer, the layered 2D perovskite comprising two or more inorganic perovskite layers, and the thin film comprising a substantially single-crystalline uniform thin film, the layered 2D perovskite being represented by (BA) 2 (MA) n−1 Pb n I 3n+1 , wherein BA is an n-butyl ammonium cation and MA is a methyl ammonium cation, and
a second electrode on the thin film.
5. The optoelectronic device of claim 4 , further comprising an electron transport layer.
6. The optoelectronic device of claim 4 , further comprising an encapsulation layer.
7. The optoelectronic device of claim 4 , wherein the optoelectronic device is a photovoltaic device, a solar cell, a LED, a LASER, an electrically injected LASER, a photo or charge particle detector, or a field effect transistor.