Image sensors
An image sensor includes a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate, a plurality of photoelectric conversion parts that are disposed in the semiconductor substrate on a side of the gate buried portion and vertically overlap each other, and a plurality of floating diffusion parts that are apart from and vertically overlap each other in the semiconductor substrate on other side of the gate buried portion, wherein at least one of the floating diffusion parts is positioned at a height of at least one of corresponding photoelectric conversion parts.
1. An image sensor, comprising:
a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate;
a plurality of photoelectric conversion parts in the semiconductor substrate on a side of the gate buried portion and overlapping each other in a direction perpendicular to the surface of the semiconductor substrate; and
a plurality of floating diffusion parts spaced apart from and overlapping each other in the semiconductor substrate on an other side of the gate buried portion in the direction perpendicular to the surface of the semiconductor substrate,
the floating diffusion parts being at a height of corresponding photoelectric conversion parts;
at least one of the photoelectric conversion parts includes a first impurity region and a second impurity region on the first impurity region, and
at least one of the floating diffusion parts has a bottom surface at the same height as a bottom surface of the first impurity region included in the at least one of the photoelectric conversion parts.
2. The image sensor of claim 1 , wherein the floating diffusion parts comprise:
a first floating diffusion part adjacent to the surface of the semiconductor substrate; and
a second floating diffusion part below and spaced apart from the first floating diffusion part;
the second floating diffusion part having an L-shaped cross-section extending to the surface of the semiconductor substrate.
3. The image sensor of claim 1 , wherein the gate buried portion extends between a lowermost floating diffusion part and a lowermost photoelectric conversion part.
4. The image sensor of claim 1 , wherein, in the semiconductor substrate, a number of the first impurity regions of the photoelectric conversion parts is the same as a number of the floating diffusion parts.
5. The image sensor of claim 1 , further comprising:
a plurality of channel regions apart from and overlapping each other between the photoelectric conversion parts and the floating diffusion parts in the direction perpendicular to the surface of the semiconductor substrate; and
at least one separation part between the channel regions,
wherein the separation part includes an insulation layer or a semiconductor pattern doped with an impurity, a conductivity of which is opposite to a conductivity of one of the floating diffusion parts.
6. The image sensor of claim 1 , wherein the at least one of the photoelectric conversion parts and the at least one of the floating diffusion parts comprises one of a region including an impurity implanted into the semiconductor substrate and an impurity-doped semiconductor pattern in the semiconductor substrate.
7. The image sensor of claim 1 , further comprising:
a plurality of contact plugs on the semiconductor substrate and connected to corresponding floating diffusion parts; and
an insulation layer surrounding a side surface of at least one of the contact plugs,
wherein the floating diffusion parts have a plate shape in the semiconductor substrate, and
wherein the contact plugs penetrate a portion of the semiconductor substrate, at least one of the contact plugs having a bottom surface in a corresponding one of the floating diffusion parts.
8. The image sensor of claim 7 , wherein the contact plugs are along a side surface of the transfer gate and evenly spaced apart from the side surface of the transfer gate.
9. The image sensor of claim 1 , further comprising at least one separation part between the floating diffusion parts.
10. The image sensor of claim 9 , wherein the separation part extends between the photoelectric conversion parts.
11. The image sensor of claim 9 , wherein the separation part comprises an insulation layer or one of a region and a semiconductor pattern doped with an impurity, a conductivity of which is different from a conductivity of an impurity doped in one of the floating diffusion parts.
12. The image sensor of claim 1 , further comprising:
a channel part adjacent to the gate buried portion and between the photoelectric conversion parts and the floating diffusion parts,
wherein the channel part includes a channel semiconductor pattern in which the gate buried portion is located and is doped with an impurity.
13. The image sensor of claim 12 , wherein each of the photoelectric conversion parts comprises:
a first semiconductor pattern doped with a first impurity having a first conductivity; and
a second semiconductor pattern on the first semiconductor pattern and doped with a second impurity having a second conductivity opposite to the first conductivity,
wherein the second semiconductor pattern and the channel semiconductor pattern are integral with each other.
14. The image sensor of claim 13 , further comprising:
at least one insulation layer between the floating diffusion parts and extending between the photoelectric conversion parts,
wherein the at least one insulation layer divides the channel semiconductor pattern into a plurality of sub-channel semiconductor patterns, and
wherein the gate buried portion penetrates the sub-channel semiconductor patterns and the at least one insulation layer.
15. An image sensor, comprising:
a semiconductor substrate;
a transfer gate on the semiconductor substrate;
a plurality of photoelectric conversion parts in the semiconductor substrate, the plurality of photoelectric conversion parts overlapping each other in a first direction perpendicular to a surface of the semiconductor substrate;
a plurality of floating diffusion parts spaced apart from and overlapping each other in the semiconductor substrate in the first direction; and
a plurality of channel regions between the plurality of floating diffusion parts and the plurality of photoelectric conversion parts;
the transfer gate overlapping the channel regions in the first direction;
at least one of the photoelectric conversion parts includes a first impurity region and a second impurity region on the first impurity region, and
at least one of the floating diffusion parts has a bottom surface at the same height as a bottom surface of the first impurity region included in the at least one of the photoelectric conversion parts.
16. The image sensor of claim 15 , wherein the floating diffusion parts are at a height of corresponding photoelectric conversion parts.
17. The image sensor of claim 15 , wherein the transfer gate includes a gate buried portion extending into the semiconductor substrate from the surface of the semiconductor substrate.
18. The image sensor of claim 17 , wherein the plurality of photoelectric conversion parts in the semiconductor substrate are on a side of the gate buried portion.
19. The image sensor of claim 18 , wherein the plurality of floating diffusion parts are on another side of the gate buried portion.