High-electron-mobility transistor devices
View Patent ↗A device includes a first high electronic mobility transistor (HEMT) and a second HEMT. The first HEMT includes a first gate, a source coupled to the first gate, and a drain coupled to the first gate. The second HEMT includes a second gate coupled to the source and to the drain. The second HEMT has a lower threshold voltage than the first HEMT.
1. A device, comprising:
a first high electronic mobility transistor (HEMT) comprising:
a first gate;
a source coupled to the first gate; and
a drain coupled to the first gate; and
a second HEMT comprising:
a second gate coupled to the source and to the drain;
wherein the first gate comprises a first contact and a first region having a first concentration of a dopant, wherein the second gate comprises a second contact and a second region having a second concentration of the dopant, and wherein the second concentration is less than the first concentration.
2. The device of claim 1 , further comprising a metal connection that connects the second gate to the source.
3. The device of claim 1 , wherein the dopant comprises a p-type dopant.
4. An electronic device, comprising:
a first field effect transistor (FET) comprising:
a layer comprising gallium; and
a first gate; and
a second FET comprising:
the layer comprising gallium; and
a second gate;
a first region disposed between the first gate and the layer comprising gallium, wherein the first region comprises a first dose of an implant material; and
a second region disposed between the second gate and the layer comprising gallium, wherein the second region comprises a second dose of the implant material and wherein the second dose is less than the first dose;
wherein the first FET and the second FET are coupled to a same source and to a same drain.
5. The electronic device of claim 4 , wherein the layer comprising gallium comprises aluminum gallium nitride (AlGaN), and wherein the electronic device further comprises:
a source region formed in the layer comprising AlGaN;
a drain region formed in the layer comprising AlGaN;
a two-dimensional electron gas (2DEG) layer coupled to the layer comprising AlGaN;
a second layer comprising GaN coupled to the layer comprising AlGaN;
a buffer layer coupled to the second layer; and
a substrate comprising silicon coupled to the buffer layer.
6. The electronic device of claim 4 , wherein the implant material comprises fluorine.
7. An electronic device, comprising:
a first field effect transistor (FET) comprising:
a source;
a drain; and
a first configuration for a structure comprising a first gate and a layer comprising gallium, the first configuration coupled to the source and to the drain; and
a second FET comprising:
a second configuration for a structure comprising a second gate and the layer comprising gallium, the second configuration coupled to the source and to the drain, wherein the second configuration is different from the first configuration;
wherein the first configuration comprises a first region disposed between the first gate and the layer comprising gallium, wherein the first region comprises a first thickness of an insulating material, wherein the second configuration comprises a second region disposed between the second gate and the layer comprising gallium, wherein the second region comprises a second thickness of an insulating material, and wherein the second thickness is less than the first thickness.
8. The electronic device of claim 7 , wherein the layer comprising gallium comprises aluminum gallium nitride (AlGaN), wherein the source and the drain are in the layer comprising AlGaN, and wherein the electronic device further comprises:
a two-dimensional electron gas (2DEG) layer coupled to the layer comprising AlGaN;
a second layer comprising GaN coupled to the 2DEG layer;
a buffer layer coupled to the second layer; and
a substrate comprising silicon coupled to the buffer layer.