Functionalized foams

1. A method comprising;

providing a foam comprising a plurality of strands of a base material interconnected to form the foam such that the foam comprises a skeleton formed by the plurality of strands, the skeleton forming a porous region between the plurality of strands;

infiltrating the plurality of strands of the base material within a depth of 0.05 micron to 1,000 microns with an inorganic material using sequential infiltration synthesis (SIS) process, the SIS process including at least one cycle of:

exposing the foam to a first metal precursor for a first predetermined time and a first partial pressure, the first metal precursor infiltrating below a surface of each of the plurality of strands forming the skeleton up to the depth and binding with the base material, and

exposing the foam to a second co-reactant precursor for a second predetermined time and a second partial pressure, the second co-reactant precursor reacting with the first metal precursor, within the base material, thereby forming the inorganic material within the base material up to the depth within the plurality of strands forming the skeleton; and

functionalizing the inorganic material with a material, creating a functionalized foam having a selected affinity.

2. The method of claim 1 , wherein the base material includes at least one of polyurethanes, polyimides, acrylics, polyamides, polyesters, polycarbonates, or polyaramides.

3. The method of claim 1 , wherein the first metal precursor comprises at least one of Trimethyl Aluminum (TMA), triethyl aluminum (TEA), Yttrium Tris(2,2,6,6-Tetramethyl-3,5-Heptanedionate) (Y(thd) 3 ), Diethyl Zinc (DEZ), Titanium tetrachloride (TiCl 4 ), Vanadium (V) Oxytriisopropoxide (VOTP), Palladium (II) hexafluoroacetylacetonate, (Pd(hfac) 2 ), copper bis(2,2, 6, 6-tetramethy 1-3, 5-heptanedionate) (Cu(thd) 2 ), copper(II) hexafluoroacetylacetonate hydrate (Cu(hfac) 2 ), iron tris(2,2,6,6-tetramethyl-3,5-heptanedionate) (Fe(thd) 3 ), cobalt tris(2,2,6,6-tetramethyl-3,5-heptanedionate) (Co(thd) 3 ), Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)barium triglyme adduct (Ba(thd) 2 ), Bis(cyclopentadienyl) ruthenium (Ru(cp) 2 ), di silane (Si 2 H 6 ), Tungsten Hexafluoride (WF 6 ), Bi s(N,N′diisopropylacetamidinato) copper(I) (Cu(DIA)), Nickel (II) acetylacetonate (Ni(acac) 2 ), antimony pentachloride (SbCl 5 ), niobium pentachloride (NbCl 5 ), niobium pentethoxide (Nb(OEt) 5 ), titanium isopropoxide (Ti(iOPr) 4 ), tris(tetramethylcyclopentadienyl) cerium (III), cyclopentadienyl indium (InCp), tris(i-propylcyclopentadienyl) lanthanum (La (iPrCp) 3 ), bis(cyclopentadienyl) magnesium (Mg(Cp) 2 ), bis (cyclopentadienyl) nickel (NiCp 2 ), (trimethyl)methylcyclopentadienylplatinum (IV) (Pt(MeCp)Me 3 ), bis (pentamethylcyclopentadienyl) strontium (Sr(Me 5 Cp) 2 ), tris (cyclopentadienyl) yttrium (YCp 3 ), bis(cyclopentadienyl) la dimethylzirconium (ZrCp 2 Me 2 ), bis(methylcyclopentadienyl) methoxymethyl zirconium (ZrOMe), tetrakis(dimethylamino) tin (TDMASn), tetrakis(dimethylamino) zirconium (TDMAZr), tris(dimethylamino) aluminum (TDMAAl), iridium(III) acetylacetonate (Ir(acac) 3 ), niobium pentafluoride (NbF 5 ), ferrocene (FeCp 2 ), cyclohexadiene iron tricarbonyl (FeHD(CO) 3 ), tetrakis(dimethylamino) antimony (TDMASb), aluminum trichloride (AlCl 3 ), niobium (V) iodide (NbI 5 ), tin (IV) iodide (SnI 4 ), Tris(tetramethylcyclopentadienyl) gadolinium(III) (Gd(Me4Cp) 3 ), Bis(pentamethylcyclopentadienyl) barium 1,2-dimethoxyethane adduct (Ba (Me 5 Cp)-2-DMA), Molybdenum Hexafluoride (MoF 6 ), Tris (tert-pentoxy)silanol (TTPSi), silicon tetrachloride (SiCl 4 ), lithium tert-butoxide (Li(tOBu)), trimethyl indium (TMin),trimethyl gallium (TMGa), and dimethyl cadmium (TMCd).

4. The method of claim 1 , wherein the second co-reactant precursor comprises at least one of water, hydrogen peroxide, nitrous oxide, oxygen, ozone, hydrogen, formaldehyde, trimethyl aluminum, ammonia, hydrazine, dimethyl hydrazine, diethyl hydrazine, methyl-ethyl hydrazine, hydrogen sulfide, trimethyl phosphite, trimethyl phosphate, silane, and disilane.

5. The method of claim 1 , wherein the inorganic material includes at least one of a metal, a metal oxide, a metal nitride, a metal sulfide, metal chalcogenide, a metal carbide or a metal phosphide.

6. The method of claim 5 , wherein the inorganic material includes at least one of Al 2 O 3 , TiO 2 , ZnO, MgO, SiO 2 , HfO 2 , ZrO 2 , and W.

7. The method of claim 1 , wherein the functionalizing is performed using atomic layer deposition.

8. The method of claim 1 , wherein the functionalizing is performed using a single-step vapor phase process.

9. The method of claim 1 , wherein the functionalizing is performed using a liquid-phase functionalization process.

10. The method of claim 1 , wherein the inorganic material has a thickness of 0.2 nm to 5,000 nm.

11. The method of claim 1 , wherein the first predetermined time is 1-10 seconds.

12. The method of claim 1 , wherein the first partial pressure is 0.1 to 1 Torr.

13. The method of claim 1 , wherein the at least one cycle comprises 1 to 5 cycles of SIS.

14. The method of claim 1 , wherein the inorganic material has a thickness of greater than 500 nm and up to 5,000 nm.