Method for fabrication of superlattices and aperiodic layered structures using solution deposition

1. A method for forming inorganic structures, comprising:

(a) transferring nanocrystals to a polar protic solvent using a chalcogenide precursor to produce a negatively-charged nanocrystal surface comprising negatively-charged chalcogen atoms bonded to metal atoms of the nanocrystal located on the nanocrystal surface;

(b) removing excess anions of the chalcogenide precursor;

(c) introducing a divalent metal salt to bind divalent metal cations to the negatively-charged chalcogen atoms bonded to the nanocrystal surface such that a metal chalcogenide monolayer is deposited on the nanocrystal surface; and

(d) removing excess divalent metal cations of the divalent metal salt.

2. The method of claim 1 , wherein the nanocrystals comprise a metal, and wherein the method further comprises: (e) treating the nanocrystal surface with oleic acid to bind oleic acid ligands to the metal of the metal chalcogenide monolayer so as to provide solubility in non-polar organic solvents.

3. The method of claim 2 , wherein steps (a) to (e) are repeated a plurality of times to deposit a plurality of metal chalcogenide monolayers on the nanocrystal surface.

4. The method of claim 1 , wherein the divalent metal salt is a metal acetate salt.

5. The method of claim 1 , wherein the polar protic solvent comprises at least one of ammonia, N-methylformamide (NMF), t-butanol, n-propanol, ethanol, methanol, acetic acid, or water.

6. The method of claim 1 , wherein the chalcogenide precursor is selected from the group consisting of sulfur, selenium, and tellurium.

7. The method of claim 1 , wherein the chalcogenide precursor comprises a material selected from the group consisting of (NH 4 ) 2 S; M 2 E or MEH, where M is Li, Na, K, Rb, Cs, or hydrazinium and E is O, OH, S, SH, Se, SeH, Te, or TeH; salts of (M x E y ) n -, where M is a metal including Cd, Sn, In, Cu, Zn Ga, Hg, or Sb, E is O, OH, S, SH, Se, SeH, Te, or TeH, n is an anionic charge number, and x and y are the number of stoichiometric units; and metal pnictide units including Li, Na, K, Rb, Cs, or hydrazinium salts of [M x P y ] n —, where M is a metal including Zn, Cd, Hg, In, Sn, Ga, or Bi, P is a pnictide, P, As, or Sb, n is an anionic charge number, and x and y are the number of stoichiometric units.

8. The method of claim 1 , wherein the divalent metal salt includes at least one of is selected from a group consisting of cadmium, zinc, tin, and lead.

9. The method of claim 1 , wherein the steps of (a) to (d) are performed at a temperature in the range of 20° C. to 50° C.