Methods for Linewidth Modification and Apparatus Implementing the Same
A linear-shaped core structure of a first material is formed on an underlying material. A layer of a second material is conformally deposited over the linear-shaped core structure and exposed portions of the underlying material. The layer of the second material is etched so as to leave a filament of the second material on each sidewall of the linear-shaped core structure, and so as to remove the second material from the underlying material. The linear-shaped core structure of the first material is removed so as to leave each filament of the second material on the underlying material. Each filament of the second material provides a mask for etching the underlying material. Each filament of the second material can be selectively etched further to adjust its size, and to correspondingly adjust a size of a feature to be formed in the underlying material.
1 . An integrated circuit, comprising:
a first linear-shaped conductive structure formed to extend lengthwise in a first direction, the first linear-shaped conductive structure having a first width size as measured in a second direction perpendicular to the first direction;
a second linear-shaped conductive structure formed to extend lengthwise in the first direction, the second linear-shaped conductive structure having a second width size as measured in the second direction perpendicular to the first direction, the second width size less than the first width size, the second linear-shaped conductive structure spaced apart from the first linear-shaped conductive structure, wherein a length of the second linear-shaped conductive structure as measured in the first direction is less than a length of the first linear-shaped conductive structure as measured in the first direction; and
a third linear-shaped conductive structure formed to extend lengthwise in the first direction, the third linear-shaped conductive structure having a third width size as measured in the second direction perpendicular to the first direction, the third width size less than the second width size, the third linear-shaped conductive structure spaced apart from either the first linear-shaped conductive structure, or the second linear-shaped conductive structure, or both the first and second linear-shaped conductive structures.