Nitride light emitting diode and fabrication method thereof
A nitride light-emitting diode (LED) fabrication method includes: providing a glass substrate; stacking a buffer layer structure composed of circular SiAlN layers and AlGaN layers with the number of cycles 1-5; growing a non-doped GaN layer, an N-type layer, a quantum well layer and a P-type layer. By using the low-cost glass the substrate that has a mature processing technology, and growing a SiAlN and an AlGaN buffer layer thereon, lattice mismatch constant between the substance and the epitaxial layer can be improved. Therefore, photoelectric property of the LED can be improved.
1. A nitride light-emitting diode (LED) structure comprising:
a non-doped GaN layer;
an N-type layer;
a quantum well layer;
a P-type layer;
a glass substrate; and
a buffer layer structure deposited over the glass substrate and comprising a SiAlN layer and an AlGaN layer.
2. The LED structure of claim 1 , wherein the glass substrate is a patterned substrate or a non-patterned substrate.
3. The LED structure of claim 1 , wherein: the AlGaN layer and the AlGaN layer of the buffer layer structure form a successively-stacked periodic structure with number of cycles of 1-5.
4. The LED structure of claim 1 , wherein the SiAlN layer has a thickness of 15 Å-300 Å.
5. The LED structure of claim 1 , wherein: the AlGaN layer has a thickness of 15 Å-300 Å.
6. A fabrication method of a nitride light-emitting diode (LED) structure, comprising:
providing a glass substrate;
stacking a buffer layer structure comprising periodic SiAlN layers and AlGaN layers with number of cycles of 1-5;
growing a non-doped GaN layer, an N-type layer, a quantum well layer, and a P-type layer over the buffer layer structure;
wherein the nitride LED structure fabricated comprise:
the non-doped GaN layer;
the N-type layer;
the quantum well layer;
the P-type layer;
the glass substrate; and
the buffer layer structure deposited over the glass substrate and comprising the SiAlN and AlGaN layers.
7. The method of claim 6 , wherein the SiAlN layers have a growth temperature of 500-1000° C. and a growth pressure of 100-500 torr.
8. The method of claim 6 , wherein the AlGaN layers have a growth temperature of 500-800° C. and a growth pressure of 100-500 torr.
9. The method of claim 6 , wherein the SiAlN layers are formed via metal-organic chemical vapor deposition (MOCVD), physical vapor deposition (PVD), or chemical vapor deposition (CVD).
10. The method of claim 6 , wherein the AlGaN layers are formed via metal-organic chemical vapor deposition (MOCVD), physical vapor deposition (PVD) or chemical vapor deposition (CVD).
11. The method of claim 6 , wherein dopant of the N-type layer comprises at least one of C, Si, Ge, Sn, Pb, O, S, Se, Te, or Po.
12. The method of claim 6 , wherein dopant of the P-type layer comprises at least one of Be, Mg, Ca, Sr, or Ba.
13. The method of claim 6 , configuring thermal expansion coefficients of the SiAlN layers and the AlGaN layers successively lower till approximating to a thermal expansion coefficient of the GaN material.
14. The method of claim 6 , further comprising adjusting Si and Al contents in the SiAlN layers.
15. The method of claim 6 , further comprising adjusting Al and Ga contents in the AlGaN layers.
16. A light-emitting system comprising a plurality of light-emitting diodes (LEDs), each LED comprising:
a non-doped GaN layer;
an N-type layer;
a quantum well layer;
a P-type layer;
a glass substrate; and
a buffer layer structure deposited over the glass substrate and comprising a SiAlN layer and an AlGaN layer.
17. The system of claim 16 , wherein the glass substrate is a patterned substrate or a non-patterned substrate.
18. The system of claim 16 , wherein the AlGaN layer and the AlGaN layer of the buffer layer structure form a successively-stacked periodic structure with number of cycles of 1-5.
19. The system of claim 16 , wherein the SiAlN layer has a thickness of 15 Å-300 Å.
20. The system of claim 16 , wherein the AlGaN layer has a thickness of 15 Å-300 Å.