Inductive Plasma Source
Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.
1 - 33 . (canceled)
34 . An apparatus for processing a substrate, comprising:
a processing chamber having an interior space;
a substrate holder in the interior space;
at least one dielectric window constituting at least a portion of a wall of the processing chamber;
an inductive coupling element having a flat coil disposed proximate the dielectric window;
an electrostatic shield disposed between the inductive coupling element and interior space;
wherein the electrostatic shield comprises an array of metal strips, each of the metal strips disposed in a direction that is generally normal to the flat coil.
35 . The apparatus of claim 34 , wherein the array of metal strips are coupled by a conductive loop.
36 . The apparatus of claim 35 , wherein the conductive loop is broken.
37 . The apparatus of claim 34 , wherein the electrostatic shield is grounded.
38 . The apparatus of claim 34 , wherein the electrostatic shield is floating.
39 . The apparatus of claim 34 , wherein the inductive coupling element comprises a U-shaped magnetic flux concentrator disposed about the flat coil.
40 . The apparatus of claim 34 , wherein the magnetic flux concentrator has a first pole area and a second pole area facing the dielectric window.
41 . The apparatus of claim 34 , wherein a conductive shield is disposed at least partially around the magnetic flux concentrator.
42 . An apparatus for processing a substrate, comprising:
a processing chamber having an interior space;
a substrate holder in the interior space;
at least one dielectric window constituting at least a portion of a wall of the processing chamber;
an inductive coupling element having a flat coil disposed proximate the dielectric window;
an electrostatic shield disposed between the inductive coupling element and interior space;
wherein the electrostatic shield comprises a flat sheet parallel to the flat coil, the flat sheet having at least one discontinuity
43 . The apparatus of claim 42 , wherein the electrostatic shield is grounded.
44 . The apparatus of claim 42 , wherein the electrostatic shield is floating.
45 . The apparatus of claim 42 , wherein the inductive coupling element comprises a U-shaped magnetic flux concentrator disposed about the flat coil.
46 . The apparatus of claim 42 , wherein the magnetic flux concentrator has a first pole area and a second pole area facing the dielectric window.
47 . The apparatus of claim 42 , wherein a conductive shield is disposed at least partially around the magnetic flux concentrator.