Oversized Contacts and Vias in Layout Defined by Linearly Constrained Topology
A rectangular-shaped interlevel connection layout structure is defined to electrically connect a first layout structure in a first chip level with a second layout structure in a second chip level. The rectangular-shaped interlevel connection layout structure is defined by an as-drawn cross-section having at least one dimension larger than a corresponding dimension of either the first layout structure, the second layout structure, or both the first and second layout structures. A dimension of the rectangular-shaped interlevel connection layout structure can exceed a normal maximum size in one direction in exchange for a reduced size in another direction. The rectangular-shaped interlevel connection layout structure can be placed in accordance with a gridpoint of a virtual grid defined by two perpendicular sets of virtual lines. Also, the first and/or second layout structures can be spatially oriented and/or placed in accordance with one or both of the two perpendicular sets of virtual lines.
1 . A semiconductor device, comprising:
a first conductive structure including a portion having a rectangular-shaped horizontal cross-section defined by a first size measured in a first direction and a second size measured in a second direction perpendicular to the first direction, the first size of the portion of the first conductive structure greater than the second size of the portion of the first conductive structure;
a second conductive structure including a portion having a rectangular-shaped horizontal cross-section defined by a first size measured in the first direction and a second size measured in the second direction, the portion of the second conductive structure formed to extend over the portion of the first conductive structure, the first size of the portion of the second conductive structure less than the second size of the portion of the second conductive structure; and
an interlevel connection structure formed to extend between the portion of the first conductive structure and the portion of the second conductive structure, the interlevel connection structure formed to physically contact both the portion of the first conductive structure and the portion of the second conductive structure, the interlevel connection structure having a rectangular-shaped horizontal cross-section defined by a first size measured in the first direction and a second size measured in the second direction, the first size of the interlevel connection structure less than the second size of the interlevel connection structure, the second size of the interlevel connection structure greater than the second size of the portion of the first conductive structure.
2 . The semiconductor device as recited in claim 1 , wherein the interlevel connection structure is substantially centered in the second direction on the portion of the first conductive structure.
3 . The semiconductor device as recited in claim 2 , wherein the interlevel connection structure is substantially centered in the first direction on the portion of the second conductive structure.
4 . The semiconductor device as recited in claim 1 , wherein the first conductive structure is a gate electrode level structure, and wherein the second conductive structure is an interconnect level structure.
5 . The semiconductor device as recited in claim 4 , wherein the interlevel connection structure is substantially centered in the second direction on the portion of the first conductive structure.
6 . The semiconductor device as recited in claim 5 , wherein the interlevel connection structure is substantially centered in the first direction on the portion of the second conductive structure.
7 . The semiconductor device as recited in claim 1 , wherein the first conductive structure is a first interconnect level structure, and wherein the second conductive structure is a second interconnect level structure.
8 . The semiconductor device as recited in claim 7 , wherein the interlevel connection structure is substantially centered in the second direction on the portion of the first conductive structure.
9 . The semiconductor device as recited in claim 8 , wherein the interlevel connection structure is substantially centered in the first direction on the portion of the second conductive structure.
10 . The semiconductor device as recited in claim 1 , wherein the interlevel connection structure is a first interlevel connection structure, the semiconductor device including a second interlevel connection structure having a rectangular-shaped horizontal cross-section defined by a first size measured in the first direction and a second size measured in the second direction, the first size of the second interlevel connection structure substantially equal to the first size of the first interlevel connection structure, the second size of the second interlevel connection structure substantially equal to the second size of the first interlevel connection structure.
11 . The semiconductor device as recited in claim 10 , further comprising:
a third conductive structure including a portion having a rectangular-shaped horizontal cross-section defined by a first size measured in the first direction and a second size measured in the second direction, the first size of the portion of the third conductive structure greater than the second size of the portion of the third conductive structure; and
a fourth conductive structure including a portion having a rectangular-shaped horizontal cross-section defined by a first size measured in the first direction and a second size measured in the second direction, the portion of the fourth conductive structure formed to extend over the portion of the third conductive structure, the first size of the portion of the fourth conductive structure less than the second size of the portion of the fourth conductive structure, wherein the second interlevel connection structure is formed to extend between the portion of the third conductive structure and the portion of the fourth conductive structure, the second interlevel connection structure formed to physically contact both the portion of the third conductive structure and the portion of the fourth conductive structure.
12 . The semiconductor device as recited in claim 11 , wherein the first interlevel connection structure is substantially centered in the second direction on the portion of the first conductive structure.
13 . The semiconductor device as recited in claim 12 , wherein the first interlevel connection structure is substantially centered in the first direction on the portion of the second conductive structure.
14 . The semiconductor device as recited in claim 13 , wherein the second interlevel connection structure is substantially centered in the second direction on the portion of the third conductive structure.
15 . The semiconductor device as recited in claim 14 , wherein the second interlevel connection structure is substantially centered in the first direction on the portion of the fourth conductive structure.
16 . The semiconductor device as recited in claim 11 , wherein the third conductive structure is formed in a same level of the semiconductor device as the first conductive structure.
17 . The semiconductor device as recited in claim 16 , wherein the fourth conductive structure is formed in a same level of the semiconductor device as the second conductive structure.
18 . The semiconductor device as recited in claim 11 , wherein the first conductive structure is a first gate electrode level structure, wherein the second conductive structure is a first interconnect level structure, wherein the third conductive structure is a second gate electrode level structure, and wherein the fourth conductive structure is a second interconnect level structure.
19 . The semiconductor device as recited in claim 18 , wherein the first interlevel connection structure is substantially centered in the second direction on the portion of the first conductive structure, wherein the first interlevel connection structure is substantially centered in the first direction on the portion of the second conductive structure, wherein the second interlevel connection structure is substantially centered in the second direction on the portion of the third conductive structure, and wherein the second interlevel connection structure is substantially centered in the first direction on the portion of the fourth conductive structure.
20 . The semiconductor device as recited in claim 11 , wherein the first conductive structure is a first interconnect level structure, wherein the second conductive structure is a second interconnect level structure, wherein the third conductive structure is a third interconnect level structure, and wherein the fourth conductive structure is a fourth interconnect level structure.
21 . The semiconductor device as recited in claim 20 , wherein the first interlevel connection structure is substantially centered in the second direction on the portion of the first conductive structure, wherein the first interlevel connection structure is substantially centered in the first direction on the portion of the second conductive structure, wherein the second interlevel connection structure is substantially centered in the second direction on the portion of the third conductive structure, and wherein the second interlevel connection structure is substantially centered in the first direction on the portion of the fourth conductive structure.