Semiconductor device structure with semiconductor wire
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes a gate structure over the fin portion and extending across the fin portion. The semiconductor device structure includes a first semiconductor wire over the fin portion and passing through the gate structure. The semiconductor device structure includes a second semiconductor wire over the first semiconductor wire and passing through the gate structure. The gate structure surrounds the second semiconductor wire and separates the first semiconductor wire from the second semiconductor wire. The first semiconductor wire and the second semiconductor wire are made of different materials.
1. A semiconductor device structure, comprising:
a substrate having a base portion and a fin portion over the base portion;
a gate structure over the fin portion and extending across the fin portion;
a first semiconductor wire over the fin portion and passing through the gate structure; and
a second semiconductor wire over the first semiconductor wire and passing through the gate structure, wherein the gate structure surrounds the second semiconductor wire and separates the first semiconductor wire from the second semiconductor wire, the first semiconductor wire and the second semiconductor wire are made of different materials, and the first semiconductor wire or the second semiconductor wire is made of silicon.
2. The semiconductor device structure as claimed in claim 1 , wherein one of the first semiconductor wire or the second semiconductor wire is made of Si X Ge 1-X , and X ranges from about 0.5 to about 0.9.
3. The semiconductor device structure as claimed in claim 1 , further comprising:
a first stressor and a second stressor over the fin portion and respectively on opposite sides of the gate structure, wherein the first stressor and the second stressor are connected to the first semiconductor wire.
4. The semiconductor device structure as claimed in claim 3 , wherein the first semiconductor wire has a first end portion and a second end portion, the first end portion and the second end portion are not covered by the gate structure, the first end portion and the second end portion are respectively on the opposite sides of the gate structure, the first stressor surrounds the first end portion, the second stressor surrounds the second end portion, and the first stressor, the second stressor, and the first semiconductor wire have a same type conductivity.
5. The semiconductor device structure as claimed in claim 3 , further comprising:
a third stressor and a fourth stressor respectively on the opposite sides of the gate structure and connected to the second semiconductor wire.
6. The semiconductor device structure as claimed in claim 5 , wherein the second semiconductor wire has a first end portion and a second end portion, the first end portion and the second end portion are not covered by the gate structure and are respectively on the opposite sides of the gate structure, the third stressor surrounds the first end portion, the fourth stressor surrounds the second end portion, and the third stressor, the fourth stressor, and the second semiconductor wire have a same type conductivity.
7. The semiconductor device structure as claimed in claim 6 , wherein the first stressor is thicker than and wider than the third stressor.
8. The semiconductor device structure as claimed in claim 1 , further comprising:
an insulating layer between the first semiconductor wire and the fin portion to separate the first semiconductor wire from the fin portion.
9. The semiconductor device structure as claimed in claim 8 , further comprising:
an isolation layer over the base portion, wherein the fin portion and the insulating layer are embedded in the isolation layer.
10. A semiconductor device structure, comprising:
a substrate having a base portion and a fin portion over the base portion;
a gate structure over the fin portion and extending across the fin portion;
a first semiconductor wire over the fin portion and passing through the gate structure; and
a second semiconductor wire over the first semiconductor wire and passing through the gate structure, wherein the second semiconductor wire is spaced apart from the first semiconductor wire, a first type conductivity of the first semiconductor wire is different from a second type conductivity of the second semiconductor wire, and the first semiconductor wire or the second semiconductor wire is made of silicon.
11. The semiconductor device structure as claimed in claim 10 , wherein the first type conductivity and the second type conductivity comprise an N-type conductivity and a P-type conductivity.
12. The semiconductor device structure as claimed in claim 10 , wherein the first semiconductor wire is thicker than the second semiconductor wire.
13. The semiconductor device structure as claimed in claim 10 wherein the first semiconductor wire and the second semiconductor wire have a same thickness.
14. The semiconductor device structure as claimed in claim 10 , further comprising:
a first stressor and a second stressor respectively on opposite sides of the gate structure and connected to the second semiconductor wire, wherein the second semiconductor wire has a first end portion and a second end portion, the first end portion and the second end portion are not covered by the gate structure and are respectively on the opposite sides of the gate structure, the first stressor surrounds the entire first end portion, the second stressor surrounds the entire second end portion, and the first stressor, the second stressor, and the second semiconductor wire have a same type conductivity.
15. The semiconductor device structure as claimed in claim 10 , wherein the first semiconductor wire is in direct contact with the substrate.
16. A semiconductor device structure, comprising:
a substrate;
a gate structure over the substrate;
a first semiconductor wire on the substrate and passing through the gate structure, wherein the first semiconductor wire is in direct contact with the substrate, and the first semiconductor wire and the substrate are made of different materials; and
a second semiconductor wire over the first semiconductor wire and passing through the gate structure, wherein the gate structure surrounds the second semiconductor wire, the first semiconductor wire is spaced apart from the second semiconductor wire, and the first semiconductor wire and the second semiconductor wire are made of different materials.
17. The semiconductor device structure as claimed in claim 16 , wherein the substrate and the second semiconductor wire are made of a same material.
18. The semiconductor device structure as claimed in claim 17 , wherein the substrate and the second semiconductor wire are made of silicon.
19. The semiconductor device structure as claimed in claim 16 , wherein the substrate has a base portion and a fin portion over the base portion, and the semiconductor device structure further comprises:
an isolation layer over the base portion, wherein the fin portion is embedded in the isolation layer; and
a first stressor and a second stressor over the fin portion and respectively on opposite sides of the gate structure, wherein the first stressor and the second stressor are connected to the first semiconductor wire and in direct contact with the isolation layer.
20. The semiconductor device structure as claimed in claim 19 , wherein a portion of the first stressor is between the first semiconductor wire and the second semiconductor wire.