Spacer structures for semiconductor devices
The structure of a semiconductor device with inner spacer structures between source/drain (S/D) regions and gate-all-around structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a stack of nanostructured layers with first and second nanostructured regions disposed on the substrate and first and second source/drain (S/D) regions disposed on the substrate. Each of the first and second S/D regions includes an epitaxial region wrapped around each of the first nanostructured regions. The semiconductor device further includes a gate-all-around (GAA) structure disposed between the first and second S/D regions and wrapped around each of the second nanostructured regions, a first inner spacer disposed between an epitaxial sub-region of the first S/D region and a gate sub-region of the GAA structure, a second inner spacer disposed between an epitaxial sub-region of the second S/D region and the gate sub-region of the GAA structure, and a passivation layer disposed on sidewalls of the first and second nanostructured regions.
1. A semiconductor device, comprising:
a substrate;
first and second source/drain (S/D) regions disposed on the substrate;
a nanostructured layer disposed between the first and second S/D regions;
a gate structure disposed between the first and second S/D regions and on the nanostructured layer; and
a passivation layer disposed on sidewalls of the nanostructured layer.
2. The semiconductor device of claim 1 , wherein the passivation layer is in contact with the first and second S/D regions.
3. The semiconductor device of claim 1 , wherein the passivation layer comprises a nitride, oxide, fluoride, chloride, or sulfide layer.
4. The semiconductor device of claim 1 , further comprising an other passivation layer disposed on a top surface of the nanostructured layer.
5. The semiconductor device of claim 1 , further comprising an other passivation layer disposed between a top surface of the nanostructured layer and a dielectric layer of the gate structure.
6. The semiconductor device of claim 1 , further comprising:
a gate spacer disposed on a sidewall of the gate structure; and
an other passivation layer disposed between a top surface of the nanostructured layer and a bottom surface of the gate spacer.
7. The semiconductor device of claim 1 , further comprising an inner spacer disposed between first S/D region and the gate structure.
8. The semiconductor device of claim 7 , wherein an interface between the inner spacer and the gate structure has a non-linear profile.
9. The semiconductor device of claim 7 , wherein an interface between the inner spacer and the gate structure has a triangular profile.
10. A semiconductor device, comprising:
a substrate;
a first nanostructured layer, disposed on the substrate, comprising a first material;
a second nanostructured layer, disposed on the first nanostructured layer, comprising a second material different from the first material;
a source/drain (S/D) region disposed on the second nanostructured layer;
a gate structure in contact with the first and second nanostructured layers; and
a passivation layer disposed on a top surface of the second nanostructured layer.
11. The semiconductor device of claim 10 , wherein a portion of the gate structure is disposed in the first or second nanostructured layer.
12. The semiconductor device of claim 10 , wherein the gate structure surrounds a portion of the first or second nanostructured layer that is non-overlapping with the S/D region.
13. The semiconductor device of claim 10 , wherein the passivation layer is disposed between the top surface of the second nanostructured layer and a dielectric layer of the gate structure.
14. The semiconductor device of claim 10 , wherein the passivation layer is disposed between the top surface of the second nanostructured layer and the S/D region.
15. The semiconductor device of claim 10 , further comprising a gate spacer disposed on a sidewall of the gate structure, wherein the passivation layer is disposed between the top surface of the second nanostructured layer and a bottom surface of the gate spacer.
16. The semiconductor device of claim 10 , wherein the passivation layer comprises a nitride, oxide, fluoride, chloride, or sulfide layer.
17. A method, comprising:
etching a substrate to form a fin base;
etching a first semiconductor layer to form a first nanostructured layer on the fin base;
etching a second semiconductor layer to form a second nanostructured layer on the first nanostructured layer;
depositing a passivation layer on sidewalls of the first and second nanostructured layers and on a top surface of the second nanostructured layer;
forming a polysilicon structure on the passivation layer;
replacing portions of the first and second nanostructured layers with a source/drain (S/D) region; and
replacing the polysilicon structure and a portion of the first or second nanostructured layers with a gate structure.
18. The method of claim 17 , wherein depositing the passivation layer comprises exposing the first and second nanostructured layers to a fluorine, chlorine, nitrogen, oxygen, hydrogen, deuterium, ammonia, or hydrogen sulfide gas.
19. The method of claim 17 , wherein depositing the passivation layer comprises depositing a low-k dielectric material.
20. The method of claim 17 , wherein replacing the portions of the first and second nanostructured layers with a source/drain (S/D) region comprises etching the portions of the first and second nanostructured layers that are non-overlapping with the polysilicon structure.