Solid-state imaging device, infrared-absorbing composition, and flattened-film-forming curable composition
Provided is a solid-state imaging device that includes: a first pixel provided with a color filter layer having a transmission band in a visible light wavelength region on a light-receiving surface of a first light-receiving element; a second pixel provided with an infrared pass filter layer having a transmission band in an infrared wavelength region on a light-receiving surface of a second light-receiving element; an infrared cut filter layer that is provided on a position overlapping with the color filter layer and transmits light in the visible light wavelength region by blocking light in the infrared wavelength region; and a cured film provided in contact with the infrared cut filter layer.
1. A solid-state imaging device comprising:
a first pixel including a color filter layer over a light-receiving surface of a first light-receiving element, the color filter layer having a transmission band in a visible light wavelength region;
a second pixel including an infrared pass filter layer over a light-receiving surface of a second light-receiving element, the infrared pass filter layer having a transmission band in an infrared wavelength region;
an infrared cut filter layer overlapping with the color filter layer to transmit light in the visible light wavelength region and block light in the infrared wavelength region;
a cured film between the color filter layer and the infrared cut filter layer; and
a second cured film over the infrared cut filter, wherein
a top surface of the infrared pass filter layer has a height substantially coinciding with a height of a top surface of the color filter layer, and
the second cured film is in contact with the cured film in the second pixel.
2. The solid-state imaging device according to claim 1 , wherein
the infrared cut filter layer is over a top surface side of the color filter layer, and
the cured film is in contact with a lower surface of the infrared cut filter layer.
3. The solid-state imaging device according to claim 2 , wherein the second cured film is in contact with a top surface of the infrared cut filter layer.
4. The solid-state imaging device according to claim 3 , wherein the second cured film is in contact with a side surface of the infrared cut filter layer.
5. The solid-state imaging device according to claim 1 , wherein the infrared cut filter layer contains an infrared-absorbing agent having a maximum absorption wavelength in a range of wavelength of from 600 to 2000 nm and has a film thickness of from 0.1 to 15 μm.
6. The solid-state imaging device according to claim 5 , wherein the infrared-absorbing agent is at least one kind of compound selected from the group consisting of a diiminium-based compound, a squarylium-based compound, a cyanine-based compound, a phthalocyanine-based compound, a naphthalocyanine-based compound, a quaterrylene-based compound, an aminium-based compound, an iminium-based compound, an azo-based compound, an anthraquinone-based compound, a porphyrine-based compound, a pyrrolopyrrole-based compound, an oxonol-based compound, a croconium-based compound, a hexaphyrin-based compound, a metal dithiol-based compound, a copper compound, a tungsten compound and a metal boride.
7. The solid-state imaging device according to claim 1 , wherein the infrared cut filter layer is formed using an infrared-absorbing composition containing at least one kind selected from an infrared-absorbing agent, a binder resin and a polymerizable compound.
8. The solid-state imaging device according to claim 1 , wherein a top surface of the infrared cut filter layer and the infrared pass filter layer are further provided with an optical filter layer having an average transmittance of 75% or higher in a range of wavelength of from 430 to 580 nm, an average transmittance of 15% or lower in a range of wavelength of from 720 to 750 nm, an average transmittance of 60% or higher in a range of wavelength of from 810 to 820 nm, and an average transmittance of 15% or lower in a range of wavelength of from 900 to 2000 nm.
9. The solid-state imaging device according to claim 1 , wherein an organic film is provided on a lower surface of the color filter layer.
10. The solid-state imaging device according to claim 1 , wherein an organic film is provided on a lower surface of the infrared cut filter layer.
11. A solid state imaging device comprising:
a first pixel including a color filter layer over a first light-receiving element;
a second pixel including an infrared pass filter layer over a second light-receiving element;
a first cured film over the color filter layer and the infrared pass filter layer;
an infrared cut filter layer over the first cured film in the first pixel; and
a second cure film over the infrared cut filer layer,
wherein the second cured film is in contact with the first cured film in the second pixel.
12. The solid-state imaging device according to claim 11 , wherein the infrared cut filter layer is in contact with the first cured film and the second cured film.
13. The solid-state imaging device according to claim 11 , wherein a top surface of the color filter layer has a height substantially coinciding with a height of a top surface of the infrared pass filter.