High efficiency spin torque switching using a ferrimagnet
In one embodiment, a spin torque device uses a thick (e.g., >1 nm, and preferably >=2-6 nm) ferrimagnet (FIM) layer, instead of a thin (e.g., <1-2 nm) FM layer in the device's stack. The FIM layer may be composed of a cobalt-gadolinium (Co—Gd) alloy, cobalt-terbium (Co—Tb) multilayers, or other materials that provide anti-ferromagnetic coupling between two sub-lattices. Negative exchange interaction between the two sub-lattices of the FIM may allow for low current switching. High thermal stability and external magnetic field resistance may also be achieved.
1. A spin-orbit torque (SOT) device arranged as a stack, comprising:
a substrate;
a heavy metal (HM) layer;
a ferrimagnet (FIM) layer disposed adjacent to the heavy metal layer, the FIM layer constructed from a material that provides anti-ferromagnetic coupling between two sub-lattices, the FIM layer having a thickness greater than 1 nanometer (nm); and
a capping layer,
wherein the stack of the SOT device is arranged such that, when an in-plane current is applied to the HM layer of the SOT device, a spin from the HM layer diffuses into the FIM layer to produce negative exchange interaction between the two sub-lattices of the FIM layer, which provides additional torque that assists current induced SOT magnetization switching of the SOT device.
2. The SOT device of claim 1 , wherein the FIM layer comprises cobalt-gadolinium (Co—Gd) or cobalt-terbium (Co—Tb) alloy.
3. The SOT device of claim 1 , wherein the FIM layer is a multilayer FIM layer that comprises one or more magnetic bilayer pairs.
4. The SOT device of claim 3 , wherein the one or more bilayer pairs each comprise a cobalt (Co) layer and a gadolinium (Gd) or terbium (Tb) layer.
5. The SOT device of claim 1 , wherein the FIM layer has thickness a greater than or equal to 2 nm.
6. The SOT device of claim 1 , wherein the FIM layer has thickness a greater than or equal to 6 nm.
7. The SOT device of claim 1 , wherein the SOT device is a SOT magnetic random access memory (MRAM).
8. A spin-orbit torque (SOT) device arranged as a stack, comprising:
a substrate;
a heavy metal (HM) layer;
a ferrimagnet (FIM) layer disposed adjacent to the heavy metal layer, the FIM layer constructed from a material that provides anti-ferromagnetic coupling between two sub-lattices, the FIM layer having a thickness greater than 1 nanometer (nm); and
a capping layer,
wherein the stack of the SOT device is arranged such that negative exchange interaction between the two sub-lattices of the FIM layer provides additional torque that assists current induced SOT magnetization switching of the SOT device.
9. The SOT device of claim 8 , wherein the FIM layer comprises cobalt-gadolinium (Co—Gd) or cobalt-terbium (Co—Tb) alloy.
10. The SOT device of claim 8 , wherein the FIM layer is a multilayer FIM layer that comprises one or more magnetic bilayer pairs.
11. The SOT device of claim 8 , wherein the one or more bilayer pairs each comprise a cobalt (Co) layer and a gadolinium (Gd) or terbium (Tb) layer.
12. The SOT device of claim 8 , wherein the FIM layer has a thickness greater than or equal to 2 nanometer (nm).
13. The SOT device of claim 8 , wherein the FIM layer has a thickness greater than or equal to 6 nanometer (nm).
14. The SOT device of claim 8 , wherein the spin torque device is a spin-orbit torque (SOT) magnetic random access memory (MRAM).
15. A method for switching a spin-orbit torque (SOT) device that is arranged as a stack that includes a substrate, a heavy metal (HM) layer, a ferrimagnet (FIM) layer, and a capping layer, the method comprising:
applying an in-plane current to the HM layer;
in response to the applied current, producing an anti-damping torque in the FIM layer that tilts two magnetic sub-lattices of the FIM causing an exchange field;
producing a negative exchange interaction torque that acts in opposite directions on the two magnetic sub-lattices,
wherein the negative exchange interaction torque assists magnetization switching of the SOT device when the in-plane current is applied.
16. The method of claim 15 , wherein the FIM layer has a thickness greater than 1 nanometer (nm).
17. The method of claim 15 , wherein the FIM layer has a thickness greater than or equal to 2 nanometer (nm).
18. The method of claim 15 , where the SOT device is a spin-orbit torque (SOT) magnetic random access memory (MRAM).
19. The SOT device of claim 1 , wherein the FIM layer has perpendicular magnetic anisotropy (PMA).