Micro light-emitting diode apparatus and display panel
A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.
1. A micro light-emitting diode apparatus, comprising:
a substrate;
a plurality of micro light-emitting diodes, disposed on the substrate; and
a first insulation layer, located between any adjacent two of the micro light-emitting diodes, wherein the first insulation layer has a concave-convex surface and comprises:
at least one convex portion;
a plurality of concave portions, the at least one convex portion being located between adjacent two of the concave portions; and
a plurality of connecting portions, the connecting portions being located between the concave portions and the micro light-emitting diodes, the connecting portions being connected to the micro light-emitting diodes, wherein a surface of the at least one convex portion, surfaces of the concave portions, and surfaces of the connecting portions together constitute a surface of the first insulation layer, and the micro light-emitting diode apparatus further satisfies: H 1 >H 2 >H 3 , wherein H 1 is a maximum height of the at least one convex portion relative to the substrate, H 2 is a maximum height of a connection part between the connecting portion and the micro light-emitting diode relative to the substrate, and H 3 is a minimum height of the concave portion relative to the substrate.
2. The micro light-emitting diode apparatus as claimed in claim 1 , wherein the micro light-emitting diode apparatus further satisfies: a value of a ratio of H 1 to H 3 is greater than 1 and less than and equal to 2.
3. The micro light-emitting diode apparatus as claimed in claim 1 , wherein the micro light-emitting diode apparatus further satisfies:
( H 2+ H 3)> H 1>1/2*( H 2+ H 3).
4. The micro light-emitting diode apparatus as claimed in claim 1 , wherein the micro light-emitting diode apparatus further satisfies: HL>H 2 , HL>H 3 , wherein HL is a maximum height of the micro light-emitting diode relative to the substrate.
5. The micro light-emitting diode apparatus as claimed in claim 1 , wherein each of the micro light-emitting diodes comprises:
an epitaxial structure, comprising:
a first-type semiconductor layer;
a second-type semiconductor layer; and
a light-emitting layer, located between the first-type semiconductor layer and the second-type semiconductor layer, wherein the micro light-emitting diode apparatus further satisfies: H 2 >HM, wherein HM is a maximum height of the light-emitting layer relative to the substrate.
6. The micro light-emitting diode apparatus as claimed in claim 5 , wherein the connecting portion is connected to and covers a side surface of the epitaxial structure.
7. The micro light-emitting diode apparatus as claimed in claim 5 , wherein the first-type semiconductor layer is an n-type semiconductor layer, and the second-type semiconductor layer is a p-type semiconductor layer.