Granted Patent B2

US 12,494,461 · App. 17/541,229 · Granted Dec 9, 2025

Inventors: Jong Hyeon Chae (Ansan-si, KR); Chang Yeon Kim (Ansan-si, KR); Ho Joon Lee (Ansan-si, KR); Seong Gyu Jang (Ansan-si, KR); Chung Hoon Lee (Ansan-si, KR); Dae Sung Cho (Ansan-si, KR)

Assignee: Seoul Viosys Co., Ltd.

H01L25/13H01L25/0756H10H20/018H10H20/835H10H20/851H10H20/857H10H29/142H01L25/0753H10H20/831

Abstract

Claims (45)

1 . A light emitting diode stack for a display, comprising:

a first LED stack;

a second LED stack disposed on the first LED stack;

a third LED stack disposed on the second LED stack and including a first semiconductor layer;

a light transmissible substrate coupled to at least one of the second LED stack or the third LED stack; and

a first signal electrode directly contacting to a top surface of the first semiconductor layer, wherein the top surface of the first semiconductor layer is further away from the light transmissible substrate than a bottom surface of the first semiconductor layer,

wherein light generated from the first LED stack is configured to be emitted to an outside of the light emitting diode stack through the second LED stack, the third LED stack, and the light transmissible substrate, and light generated from the second LED stack is configured to be emitted to the outside of the light emitting diode stack through the third LED stack and the light transmissible substrate, and

wherein an outer side surface of the light transmissible substrate is positioned further out in an outward direction than an outer side surface of the first semiconductor layer between the light transmissible substrate and the top surface of the first semiconductor layer.

2 . The light emitting diode stack for a display of claim 1 , further comprising:

a first bonding layer interposed between the first LED stack and the second LED stack; and

a second bonding layer interposed between the second LED stack and the third LED stack,

wherein the first bonding layer is configured to transmit light generated from the first LED stack, and the second bonding layer is configured to transmit light generated from the first and second LED stacks.

3 . The light emitting diode stack for a display of claim 2 , wherein the first bonding layer and the second bonding layer comprise at least one of a transparent inorganic insulation layer, a transparent organic insulation layer, and a transparent conductive layer.

4 . The light emitting diode stack for a display of claim 1 , wherein each of the first LED stack, the second LED stack, and the third LED stack comprises:

a first semiconductor layer;

a second semiconductor layer; and

an active layer disposed between the first semiconductor layer and the second semiconductor layer, and

wherein the first semiconductor layer and the second semiconductor layer have different conductivities.

5 . The light emitting diode stack for a display of claim 4 , wherein the light transmissible substrate comprises a homogeneous substrate to at least one of the second LED stack and the third LED stack, and is monolithically coupled to the at least one of the second LED stack and the third LED stack.

6 . The light emitting diode stack for a display of claim 5 , wherein the first semiconductor layer of at least one of the second LED stack and the third LED stack has a dislocation density of 10 3 /cm 2 to 10 7 /cm 2 .

7 . The light emitting diode stack for a display of claim 5 , wherein the light transmissible substrate comprises an n-type doped GaN-based substrate.

8 . The light emitting diode stack for a display of claim 5 , wherein at least a portion of the light transmissible substrate has a roughened surface.

9 . The light emitting diode stack for a display of claim 1 , further comprising a support substrate including a circuit disposed under the first LED stack.

10 . The light emitting diode stack for a display of claim 9 , further comprising a third bonding layer disposed between the support substrate and the first LED stack.

11 . A display apparatus comprising:

a support substrate;

a plurality of pixels disposed on the support substrate and arranged in a matrix; and

an insulation layer covering the pixels,

wherein each of the pixels comprises:

a light transmissible substrate;

a first semiconductor layer on the light transmissible substrate;

a first signal electrode directly contacting to a top surface of the first semiconductor layer, wherein the top surface of the first semiconductor layer is further away from the light transmissible substrate than a bottom surface of the first semiconductor layer;

a second semiconductor layer; and

an active layer disposed between the first semiconductor layer and the second semiconductor layer,

wherein the first semiconductor layer and the second semiconductor layer have different conductivities, and

wherein an outer side surface of the light transmissible substrate is positioned further out in an outward direction than an outer side surface of the first semiconductor layer between the light transmissible substrate and the top surface of the first semiconductor layer.

12 . The display apparatus of claim 11 , wherein the support substrate comprises a circuit including scan lines and data lines.

13 . The display apparatus of claim 12 , wherein the scan lines or the data lines are electrically connected to the light transmissible substrate.

14 . The display apparatus of claim 13 , wherein each of the pixels comprises a plurality of light emitting elements.

15 . The display apparatus of claim 14 , wherein the scan lines or the data lines further comprises interconnection lines.

16 . The display apparatus of claim 15 , wherein the light emitting elements in each pixel are electrically connected to the interconnection lines, respectively, and are electrically connected to a common line.

17 . The display apparatus of claim 15 , wherein the light emitting elements in each pixel are configured to be independently driven.

18 . The display apparatus of claim 14 , wherein the light emitting elements in each pixel are configured to emit light having different wavelengths from one another.

19 . The display apparatus of claim 11 , wherein the light transmissible substrate comprises an N-type doped GaN-based substrate.

20 . The display apparatus of claim 11 , wherein at least a portion of the light transmissible substrate comprises a roughened surface.

Continuity (9)

References Cited (387)