Light-emitting device and display device including the same
A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.
1. A light-emitting device, comprising:
a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface;
a light-emitting structure on the first side surface of the substrate, the light-emitting structure including:
a first-conductivity-type semiconductor layer,
a second-conductivity-type semiconductor layer, and
an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer,
wherein the substrate has a first width in a direction perpendicular to the first side surface of the substrate and a first height in a direction perpendicular to the top surface of the substrate, the first width being at least two times longer than the first height,
wherein the light-emitting structure emits a first light having a first peak wavelength, and
wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate;
a first electrode on the first side surface of the substrate and electrically connected to the first-conductivity-type semiconductor layer, the first-conductivity-type semiconductor layer being between the first electrode and the first side surface of the substrate; and
a second electrode on the first side surface of the substrate and electrically connected to the second-conductivity-type semiconductor layer, the second-conductivity-type semiconductor layer being between the second electrode and the first side surface of the substrate,
wherein at least a portion of each of the first and second electrodes overlaps each of the first-conductivity-type semiconductor layer, the second-conductivity-type semiconductor layer, and the active layer along a direction normal to the first side surface of the substrate.
2. The light-emitting device as claimed in claim 1 , wherein the substrate is a crystal growth substrate of the light-emitting structure.
3. The light-emitting device as claimed in claim 1 , wherein:
the light-emitting structure overlaps the entire first side surface of the substrate, such that at least the first-conductivity-type semiconductor layer faces and overlaps the entire first side surface of the substrate, and
an area of the top surface of the substrate is larger than an overlap area between the light-emitting structure and the first side surface of the substrate.
4. The light-emitting device as claimed in claim 3 , wherein a ratio of an area of the top surface of the substrate to the overlap area ranges from about 2:1 to about 100:1.
5. The light-emitting device as claimed in claim 1 , wherein a ratio of the first width to the first height is about 2:1 to about 100:1.
6. The light-emitting device as claimed in claim 1 , wherein:
the substrate further comprises a second side surface other than the first side surface, and
the light-emitting device further comprises a side reflective layer on the second side surface of the substrate to reflect first light emitted by the light-emitting structure toward the second side surface of the substrate.
7. The light-emitting device as claimed in claim 6 , wherein the side reflective layer covers a portion of a side surface of the light-emitting structure.
8. The light-emitting device as claimed in claim 1 , further comprising a bottom reflective layer on a bottom surface of the substrate to reflect first light emitted by the light-emitting structure toward the bottom surface of the substrate.
9. The light-emitting device as claimed in claim 1 , further comprising:
a first bottom reflective layer on a bottom surface of the substrate and electrically connected to the first electrode, the first bottom reflective layer reflecting first light emitted by the light-emitting structure toward the bottom surface of the substrate; and
a second bottom reflective layer on the bottom surface of the substrate and electrically connected to the second electrode, the second bottom reflective layer reflecting first light emitted by the light-emitting structure toward the bottom surface of the substrate.