Image sensors and methods of forming the same
An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.
1. An image sensor comprising:
a substrate having a first surface and a second surface opposite to the first surface;
a plurality of photoelectric conversion parts disposed between the first and second surfaces;
a plurality of interconnection structures disposed on the first surface;
a light shielding pattern disposed on the second surface of the substrate;
a first trench recessed from the second surface of the substrate overlapping the light shielding pattern;
a second trench recessed from the second surface of the substrate and not overlapping the light shielding pattern;
a first device isolation pattern disposed in the first trench; and
a second device isolation pattern disposed in the second trench,
wherein a depth of the first device isolation pattern is smaller than a depth of the second device isolation pattern.
2. The image sensor of claim 1 , further comprising a third trench disposed between the first trench and the second trench, the third trench having a substantially same height with the second trench, and the third trench being positioned at or near a first end of the light shielding pattern.
3. The image sensor of claim 1 , further comprising a p-type doping region under the first surface of the substrate.
4. The image sensor of claim 3 , wherein the second trench contacts the p-type doping region.
5. The image sensor of claim 1 , further comprising an anti-reflection layer disposed between the light shielding pattern and the second surface of the substrate.
6. The image sensor of claim 1 , the first and second device isolation patterns comprise insulating material.
7. The image sensor of claim 6 , wherein the insulating material has a refractive index lower than a refractive index of the substrate.
8. The image sensor of claim 1 , wherein the first trench is formed in a light shielding region, the second trench is formed in a light receiving region, and a third trench is formed in a dummy region, wherein each first, second, and third trench is disposed between the plurality of photoelectric conversion parts.