IP Library Granted Patent US 10,249,348
Granted Patent B2
US 10,249,348 · App. 15/663,545 · Granted Apr 2, 2019

Apparatuses and methods for generating a voltage in a memory

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Quick Facts
Patent No.
US 10,249,348
App. No.
15/663,545
Granted
Apr 2, 2019
Kind
B2
Abstract

Apparatuses and methods for generating a voltage are described. An example apparatus includes first, second, and third bias circuits configured to provide first, second, and third bias signals, respectively. The example apparatus further includes a voltage output circuit configured to receive the first, second, and third bias signals. The voltage output circuit includes an output circuit and a current circuit. The output circuit includes an output node, a first node, and an input circuit configured to receive the first bias signal. The output circuit is configured to provide an output voltage at the output node having a magnitude based on the magnitude of the first bias signal. The current circuit includes a first transistor configured to receive the second bias signal and further includes a second transistor configured to receive the third bias signal. The first transistor and second transistor are coupled in parallel and to the first node.

Claims (22)

1. An apparatus, comprising:

a pull-up circuit configured to be coupled to a power supply and coupled to an output node at which an output voltage is provided;

a capacitance coupled to the output node and to a gate node of the pull-up circuit;

a pull-down circuit configured to be coupled to a reference voltage and coupled to the output node;

an input circuit coupled to the output node and to a gate node of the pull-down circuit, the input circuit configured to receive an input voltage;

a first transistor coupled to the gate node of the pull-up circuit and to the gate node of the pull-down circuit, the first transistor configured to receive a first bias signal; and

a second transistor coupled to the gate node of the pull-up circuit and to the gate node of the pull-down circuit, the second transistor configured to receive a second bias signal.

2. The apparatus of claim 1 , further comprising a bias circuit configured to provide the first bias signal, wherein the bias circuit comprises:

a first load circuit configured to have a first threshold voltage matched to a threshold voltage of the pull-down circuit;

a second load circuit configured to have a second threshold voltage matched to a threshold voltage of the first transistor, and

a current source circuit, wherein the current source circuit, the first load circuit, and the second load circuit are coupled in series.

3. The apparatus of claim 2 wherein the first load circuit comprises a first load coupled transistor and wherein the second load circuit comprises a second load coupled transistor.

4. The apparatus of claim 1 , further comprising a bias circuit configured to provide the second bias signal, wherein the bias circuit comprises:

a first load circuit configured to have a first threshold voltage matched to a threshold voltage of the pull-up circuit;

a second load circuit configured to have a second threshold voltage matched to a threshold voltage of the second transistor; and

a current source circuit, wherein the current source circuit, the first load circuit, and the second load circuit are coupled in series.

5. The apparatus of claim 4 wherein a size of the pull-up circuit is scaled relative to a size of the first load circuit.

6. The apparatus of claim 1 wherein the reference voltage comprises ground.

7. The apparatus of claim 1 , further comprising:

a first current source circuit configured to be coupled to a power supply and coupled to the gate node of the pull-up circuit; and

a second current source circuit configured to be coupled to the reference voltage and coupled to the gate node of the pull-down circuit.

8. The apparatus of claim 7 wherein the first current source circuit is configured to provide a first current and the second current source circuit is configured to provide a second current, wherein the second current is greater than the first current.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050709/0838 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046597/0333 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 6 TO PATENT SECURITY AGREEMENT Recorded Nov 1, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 044653/0333 →
SUPPLEMENT NO. 6 TO PATENT SECURITY AGREEMENT Recorded Nov 1, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 044348/0253 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2017
From: TANAKA, HITOSHI; ORITO, YASUNORI
To: MICRON TECHNOLOGY, INC.
Reel/Frame 043135/0390 →