Die attach methods and semiconductor devices manufactured based on such methods
A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. A maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers.
1. A semiconductor device, comprising:
a carrier;
a semiconductor die; and
a die attach material arranged between the carrier and the semiconductor die,
wherein a fillet height of the die attach material is less than about 95% of a height of the semiconductor die,
wherein a maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers,
wherein a thermal conductivity of the die attach material is greater than about 0.5 W/(m ·K),
wherein the die attach material comprises a polymeric material and at least one of electrically conductive and thermally conductive filler particles, and
wherein the filler particles have a diameter of greater than 50 nm and less than 9 μm.
2. The semiconductor device of claim 1 , wherein the filler particles comprise at least one of silicon dioxide, aluminum oxide, alumina, boron nitride, silicon carbide, gallium nitride, and mixing systems thereof.
3. The semiconductor device of claim 1 , wherein the die attach material forms a fillet at a side surface of the semiconductor die, wherein the fillet height is the height of a portion of the side surface covered by the die attach material.
4. The semiconductor device of claim 1 , wherein the carrier comprises at least one of a lead, a die pad, a leadframe, a printed circuit board, a ceramic, a metal plated ceramic, a substrate, and a power electronic substrate.
5. The semiconductor device of claim 1 , wherein the die attach material extends over the edges of the main surface of the semiconductor die facing the die attach material at more of about 50% of the overall length of the edges.
6. The semiconductor device of claim 1 , wherein the filler particles comprise at least one of silver, copper, nickel, gold, aluminum, and mixing systems thereof.
7. The semiconductor device of claim 1 , wherein an average bondline thickness of the die attach material is in a range from about 10 micrometers to about 80 micrometers.
8. The semiconductor device of claim 1 , wherein a tilt of the semiconductor die or the die attach material is less than about 15 micrometers.
9. The semiconductor device of claim 1 , wherein the height of the semiconductor die is less than about 400 micrometers.
10. The semiconductor device of claim 1 , wherein the fillet has a shape of a meniscus.