Power metal-oxide-semiconductor field-effect transistor
A semiconductor device includes: a first semiconductor region disposed over a second semiconductor region, wherein the first and second semiconductor regions have a first doping type and a second doping type, respectively; a first source/drain contact region and a second source/drain contact region having the second doping type and laterally spaced; and a gate electrode disposed laterally between the first and second source/drain contact regions, wherein the gate electrode comprises a first sidewall relatively closer to the first source/drain region and a second sidewall relatively closer to the second source/drain region, and wherein respective cross-sectional areas of the first and second sidewalls of the gate electrode are different from each other.
1. A semiconductor device, comprising:
a first semiconductor region disposed over a second semiconductor region, wherein the first and second semiconductor regions have a first doping type and a second doping type, respectively;
a first source/drain contact region and a second source/drain contact region having the second doping type and laterally spaced;
a gate electrode disposed laterally between the first and second source/drain contact regions, wherein the gate electrode comprises a first sidewall relatively closer to the first source/drain region and a second sidewall relatively closer to the second source/drain region, and wherein respective cross-sectional areas of the first and second sidewalls of the gate electrode are different from each other; and
a channel region to be formed in the first semiconductor region when the semiconductor device is turned on, wherein the channel region extends vertically from the first source/drain contact region, along the first sidewall of the gate electrode, and to a lower boundary of the first semiconductor region.
2. The semiconductor device of claim 1 , wherein the first doping type is different from the second doping type.
3. The semiconductor device of claim 1 , wherein the cross-sectional area of the first sidewall of the gate electrode is substantially greater than the cross-sectional area of the second sidewall of the gate electrode.
4. The semiconductor device of claim 1 , further comprising:
a first drift region and a second drift region to be formed in the second semiconductor region when the semiconductor device is turned on, wherein the first drift region extends along at least part of a third sidewall of the gate electrode and the second drift region extends along at least part of a fourth sidewall of the gate electrode, the third and fourth sidewalls of the gate electrode being coupled between the first and second sidewalls of the gate electrode, respectively.
5. The semiconductor device of claim 1 , wherein a bottom surface of the gate electrode is recessed below a lower boundary of the first semiconductor region.
6. The semiconductor device of claim 1 , further comprising:
a gate dielectric layer surrounding at least a lower portion of the gate electrode.
7. The semiconductor device of claim 1 , further comprising:
an isolation region disposed laterally between the first and second source/drain contact regions, wherein the gate electrode extends into the isolation region.
8. The semiconductor device of claim 7 , wherein the second sidewall of the gate electrode is laterally spaced from the second source/drain contact region by part of the isolation region.
9. A semiconductor device, comprising:
a first semiconductor region disposed over a second semiconductor region, wherein the first and second semiconductor regions have a first doping type and a second doping type, respectively;
a first source/drain contact region and a second source/drain contact region having the second doping type and laterally spaced;
a gate electrode disposed laterally between the first and second source/drain contact regions, wherein the gate electrode comprises a first sidewall, a second sidewall, a third sidewall, and a fourth sidewall, wherein the first sidewall is adjacent to the first source/drain region and the second sidewall is adjacent to the second source/drain region, and the third and fourth sidewalls are respectively coupled between the first and second sidewalls, and wherein a cross-sectional area of the first sidewall is greater than a cross-sectional area of the second sidewall; and
a channel region to be formed in the first semiconductor region when the semiconductor device is turned on, wherein the channel region extends vertically from the first source/drain contact region, along the first sidewall of the gate electrode, and to a lower boundary of the first semiconductor region.
10. The semiconductor device of claim 9 , wherein the first doping type is different from the second doping type.
11. The semiconductor device of claim 9 , further comprising:
a gate dielectric layer surrounding at least a lower portion of the gate electrode.
12. The semiconductor device of claim 9 , further comprising:
a first drift region to be faulted in the second semiconductor region when the semiconductor device is turned on, wherein the first drift region extends along at least part of the third sidewall of the gate electrode.
13. The semiconductor device of claim 9 , further comprising:
a second drift region to be formed in the second semiconductor region when the semiconductor device is turned on, wherein the second drift region extends along at least part of the fourth sidewall of the gate electrode.
14. The semiconductor device of claim 9 , further comprising:
an isolation region disposed laterally between the first and second source/drain contact regions, wherein the gate electrode extends into the isolation region.
15. The semiconductor device of claim 14 , wherein the second sidewall of the gate electrode is laterally spaced from the second source/drain contact region by part of the isolation region.
16. The semiconductor device of claim 14 , wherein the third and fourth sidewalls of the gate electrode are laterally spaced from the second semiconductor region by part of the isolation region, respectively.
17. A semiconductor device, comprising:
a first semiconductor region disposed over a second semiconductor region, wherein the first and second semiconductor regions have a first doping type and a second doping type, respectively;
a first source/drain contact region and a second source/drain contact region having the second doping type and laterally spaced;
a gate electrode disposed laterally between the first and second source/drain contact regions, wherein the gate electrode comprises a first sidewall adjacent to the first source/drain region and a second sidewall adjacent to the second source/drain region; and
a channel region to be formed in the first semiconductor region when the semiconductor device is turned on, wherein the channel region extends vertically from the first source/drain contact region, along the first sidewall of the gate electrode, and to a lower boundary of the first semiconductor region.
18. The semiconductor device of claim 17 , further comprising:
a first drift region and a second drift region to be formed in the second semiconductor region when the semiconductor device is turned on, wherein the first drift region extends along at least part of a third sidewall of the gate electrode and the second drift region extends along at least part of a fourth sidewall of the gate electrode, the third and fourth sidewalls of the gate electrode being coupled between the first and second sidewalls of the gate electrode, respectively.
19. The semiconductor device of claim 17 , wherein a cross-sectional area of the first sidewall of the gate electrode is substantially greater than a cross-sectional area of the second sidewall of the gate electrode.
20. The semiconductor device of claim 17 , further comprising:
an isolation region disposed laterally between the first and second source/drain contact regions, wherein the gate electrode extends into the isolation region.