IP Library Granted Patent US 9,922,683
Granted Patent B2
US 9,922,683 · App. 15/665,062 · Granted Mar 20, 2018

Power delivery circuitry

Inventor: Shaun Alan Stickel (Boise, ID)
Assignee: Micron Technology, Inc.
G11C5/141G11C5/143G11C7/24G11C14/00G11C16/30
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Quick Facts
Patent No.
US 9,922,683
App. No.
15/665,062
Filed
Jul 31, 2017
Granted
Mar 20, 2018
Kind
B2
Examiner
LUU, PHO M
Art Unit
2824
USPC
365/228
Abstract

A memory device includes a memory system and an energy storage device including a capacitor. Additionally, the memory storage device includes power delivery circuitry that delivers to the memory system a first power from the energy storage device and a second power from an external power supply coupled to the memory device.

Claims (29)

1. A system, comprising:

a memory device, comprising:

a memory system;

an energy storage device; and

power delivery circuitry configured to deliver to the memory system a first power from the energy storage device and a second power from an external power supply coupled to the memory device, wherein the memory system has a power demand limit that exceeds the maximum power that may be delivered by the external power supply.

2. The system of claim 1 , wherein the power delivery circuitry maintains a constant output voltage to the memory system.

3. The system of claim 2 , wherein the constant output of the power delivery circuitry is maintained and/or smoothed by the energy storage device.

4. The system of claim 1 , wherein the energy storage device is configured to provide the first power in combination with the second power to meet a power demand of the memory system.

5. The system of claim 4 , wherein the power demand of the memory system is greater than 200 mW and a maximum power providable by the external power supply is 200 mV.

6. The system of claim 4 , wherein the use of the energy storage device allows for a maintained or a decreased latency of the memory system.

7. The system of claim 4 , wherein the power demand of the memory system is the power demand associated with the memory system being idle.

8. The system of claim 1 , wherein the second power is 0 W.

9. The system of claim 1 , wherein when the power demand of the memory system is less than the maximum power of the external power supply, and the energy storage device is charged by the second power from the external power supply that is in excess of the power demand of the memory system.

10. The system of claim 1 , wherein when the power demand of the memory system is not met, the performance of the memory system is configured to be throttled.

11. The system of claim 1 , wherein the power delivery circuitry is configured to output 3.3 V to the memory system.

12. The system of claim 1 , wherein the external power supply is configured to supply 5 V to the power delivery system.

13. A method, comprising:

maintaining a latency of a memory system when the memory system is operating in an overdraw state, wherein the overdraw state comprises the memory system having a power demand higher than a maximum output power of an external power supply; and

supplying a supplemental power from an energy storage device, wherein the supplemental power is combined with a supply power from the external power supply to meet the power demand of the memory system.

14. The method of claim 13 , wherein the latency of the memory system in the overdraw state is less than or equal to the latency of the memory system when it is not in the overdraw state.

15. The method of claim 13 , comprising maintaining a constant voltage to the memory system.

16. The method of claim 15 , wherein, the constant voltage is smoothed by the energy storage device.

17. A solid state memory device, comprising:

a memory system;

an energy storage device comprising a capacitor; and

power delivery circuitry coupled in parallel with the energy storage device, wherein the power delivery circuitry is configured to deliver to the memory system a first power from an external power supply and a second power from the energy storage device, wherein the memory system has a power demand limit that exceeds the maximum power that may be delivered by the external power supply.

18. The system of claim 17 , wherein the power demand limit of the memory system is greater than the maximum power providable by the external power supply in an overdraw condition.

19. The system of claim 18 , wherein the power demand of the memory system is satisfied by the external power supply in combination with the energy storage device, via the power delivery circuitry.

20. The system of claim 18 , wherein the memory system is configured to maintain the latency or a decreased latency when in the overdraw condition.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050709/0838 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046597/0333 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 6 TO PATENT SECURITY AGREEMENT Recorded Nov 1, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 044348/0253 →
SUPPLEMENT NO. 6 TO PATENT SECURITY AGREEMENT Recorded Nov 1, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 044653/0333 →
Continuity (2)
Continuation 15169075 · May 31, 2016
Related Publication 20170345463A1 · Nov 30, 2017