Device including quantum dots
A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.
1. A device including a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrode, a first layer disposed between the first electrode and the layer comprising quantum dots, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and the first layer, wherein the first interfacial layer is a distinct layer, wherein the first interfacial layer comprises a material non-quenching dot emission.
2. A device in accordance with claim 1 wherein the first layer comprises a material capable of injecting and transporting charge.
3. A device in accordance with claim 1 wherein the first interfacial layer comprises an inorganic material.
4. A device in accordance with claim 1 wherein the first interfacial layer comprises an organic material.
5. A device in accordance with claim 1 wherein the first interfacial layer fills voids that may exist between quantum dots.
6. A device in accordance with claim 1 wherein the first interfacial layer protects quantum dots from charge quenching sites in a contiguous device layer.
7. A device in accordance with claim 1 wherein the first interfacial layer comprises a surfactant.
8. A device in accordance with claim 1 wherein the first interfacial layer comprises a silicon-containing coupling agent.
9. A device in accordance with claim 1 wherein the first interfacial layer comprises a metal oxide.
10. A device in accordance with claim 1 wherein the first interfacial layer comprises a metal oxide including an alkali metal or alkaline earth metal dopant.
11. A device in accordance with claim 1 wherein the first interfacial layer comprises an organic small molecule material.
12. A device in accordance with claim 1 wherein the first interfacial layer comprises a material that is non-crystallizing.
13. A device in accordance with claim 1 wherein the first interfacial layer comprises material with a glass transition temperature (Tg) greater than 150° C.
14. A device in accordance with claim 1 wherein the first interfacial layer comprises a spiro compound.
15. A device in accordance with claim 1 wherein the first interfacial layer comprises non-light-emitting nanoparticles having a bandgap that is the same or similar to the bandgap of quantum dots included in the layer comprising quantum dots.
16. A device in accordance with claim 1 wherein the first interfacial layer comprises non-light-emitting nanoparticles having a bandgap is higher than the bandgap of quantum dots Included in the layer comprising quantum dots.
17. A device in accordance with claim 1 wherein the first interfacial layer comprises non-light-emitting semiconductor nanoparticles that have been chemically treated to give them intrinsic semiconductor properties.
18. A device in accordance with claim 1 wherein the first interfacial layer comprises non-light-emitting semiconductor nanoparticles that have been chemically treated to give them n-type (electron transporting) semiconductor properties.
19. A device in accordance with claim 1 wherein the first interfacial layer comprises non-light-emitting semiconductor nanoparticles that have been chemically treated to give them p-type (hole transporting) semiconductor properties.
20. A device in accordance with claim 1 wherein the first interfacial layer comprises non-light-emitting nanoparticles that have been chemically treated to include a chemical linker capable of attaching to the layer comprising quantum dots.
21. A device in accordance with claim 1 wherein the first interfacial layer comprises organic small molecules having a dipole moment that modifies the work function of the first layer.
22. A device in accordance with claim 1 wherein the first interfacial layer comprises organic small molecules that chemically stabilizes the surface of the first layer.
23. A device in accordance with claim 1 wherein the first interfacial layer comprises an inorganic material that chemically stabilizes the surface of the first layer.
24. A device in accordance with claim 1 wherein the first interfacial layer comprises an adhesion promoting moiety.
25. A device in accordance with claim 1 wherein the first interfacial layer comprises a bipolar transport material.
26. A device in accordance with claim 2 further comprising a second layer comprising a material capable of transporting charge disposed over the layer comprising quantum dots.
27. A device in accordance with claim 26 further comprising a second interfacial layer disposed between the layer comprising quantum dots and the second layer.
28. A device in accordance with claim 26 wherein the second layer comprises a material capable of injecting and transporting charge.
29. A device in accordance with claim 26 wherein the first layer comprises one or more inorganic materials.
30. A device in accordance with claim 26 wherein the second layer comprises one or more organic materials.