Plasma processing apparatus

1. A plasma processing apparatus, comprising:

an electrostatic chuck supporting a wafer;

a focus ring disposed to surround an outer circumferential surface of the wafer;

an insulation ring disposed to surround an outer circumferential surface of the focus ring; and

an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck;

wherein the edge ring includes a flow channel containing a fluid therein,

wherein the fluid includes a coolant, and

wherein the edge ring cools the focus ring and the insulation ring with the fluid.

2. The plasma processing apparatus as claimed in claim 1 , further comprising:

a first pad interposed between the focus ring and the edge ring; and

a second pad interposed between the insulation ring and the edge ring.

3. The plasma processing apparatus as claimed in claim 2 , wherein:

a first contact area of the first pad and the focus ring has a first size, and

a second contact area of the second pad and the insulation ring has a second size, the second size being different from the first size.

4. The plasma processing apparatus as claimed in claim 1 , wherein the focus ring contains materials that are different from materials contained in the insulation ring.

5. The plasma processing apparatus as claimed in claim 1 , wherein the flow channel includes:

a first flow channel disposed to vertically overlap a contact surface between the focus ring and the edge ring; and

a second flow channel disposed to vertically overlap a contact surface between the insulation ring and the edge ring.

6. The plasma processing apparatus as claimed in claim 5 , wherein:

the fluid includes a first fluid and a second fluid, the second fluid being maintained at a temperature that is different from a temperature at which the first fluid is maintained,

the first fluid is contained in the first flow channel, and

the second fluid is contained in the second flow channel.

7. The plasma processing apparatus as claimed in claim 1 , further comprising a gap between the edge ring and the electrostatic chuck, wherein the edge ring changes a width of the gap depending on a temperature of the fluid contained in the flow channel.

8. A plasma processing apparatus, comprising:

a plasma chamber supplied with plasma;

an electrostatic chuck disposed in the plasma chamber and supporting a wafer;

an edge ring spaced apart from the electrostatic chuck, the edge ring surrounding an outer circumferential surface of the electrostatic chuck and including a flow channel containing a fluid therein;

a focus ring surrounding an outer circumferential surface of the wafer and disposed on the edge ring; and

a fluid controller to control a supply of the fluid contained in the flow channel of the edge ring,

wherein:

the edge ring and the electrostatic chuck form a capacitor, and

the fluid controller controls an amount and temperature of the fluid contained in the edge ring.

9. The plasma processing apparatus as claimed in claim 8 , further comprising a gap between the edge ring and the electrostatic chuck.

10. The plasma processing apparatus as claimed in claim 9 , wherein:

the fluid controller supplies the fluid to expand the edge ring, the fluid having a temperature that exceeds a reference temperature, and

a width of the gap is decreased by expansion of the edge ring.

11. The plasma processing apparatus as claimed in claim 10 , wherein capacitance of the capacitor is increased by the expansion of the edge ring.

12. The plasma processing apparatus as claimed in claim 8 , wherein the fluid controller controls capacitance of the capacitor by adjusting an amount of the fluid contained in the edge ring.

13. The plasma processing apparatus as claimed in claim 8 , wherein:

the electrostatic chuck forms a capacitive path with a plasma sheath formed by plasma, and

the capacitive path includes the capacitor formed by the edge ring and the electrostatic chuck.

14. A plasma processing apparatus, comprising:

an electrostatic chuck on which a wafer is supportable;

a focus ring surrounding an outer circumferential surface of a location where the wafer is to be supported;

an insulation ring surrounding an outer circumferential surface of the focus ring; and

an edge ring supporting the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck;

wherein the edge ring includes a flow channel through which a fluid is flowable,

wherein the fluid includes a coolant, and

wherein the edge ring cools the focus ring and the insulation ring with the fluid.

15. The plasma processing apparatus as claimed in claim 14 , wherein:

the focus ring includes a first pad contacting the edge ring,

the insulation ring includes a second pad contacting the edge ring,

a first contact area of the first pad and the focus ring has a first size, and

a second contact area of the second pad and the insulation ring has a second size, the second size being different from the first size.

16. The plasma processing apparatus as claimed in claim 14 , wherein the flow channel includes:

a first flow channel aligned with a contact surface between the focus ring and the edge ring; and

a second flow channel aligned with a contact surface between the insulation ring and the edge ring.

17. The plasma processing apparatus as claimed in claim 14 , wherein a plasma concentration is uniform across a surface of the wafer during operation of the plasma processing apparatus.

18. The plasma processing apparatus as claimed in claim 17 , wherein the plasma concentration is maintained in a uniform state in response to the focus ring and the insulation ring being maintained at a same temperature.