Resist underlayer film-forming composition, resist underlayer film, resist underlayer film-forming process, and production method of patterned substrate
A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.
1. A production method of a patterned substrate comprising:
applying a resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate;
heating the coating film to obtain a resist underlayer film;
forming a resist pattern on an upper face side of the resist underlayer film; and
etching the resist underlayer film and the substrate using the resist pattern as a mask,
the resist underlayer film-forming composition comprising:
a solvent; and
a compound comprising an aromatic ring,
wherein the solvent comprises:
a first solvent having a normal boiling point of less than 156° C., and being an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, or a combination thereof; and
a second solvent having a normal boiling point of no less than 210° C. and no greater than 230° C.,
wherein the compound comprising an aromatic ring comprises a novolak resin, a resol resin, a styrene resin, an acenaphthylene resin, an indene resin, an arylene resin, a triazine resin, a calixarene resin, a fullerene resin, or a combination thereof.
2. The production method according to claim 1 , wherein a percentage content of the second solvent in the solvent is no less than 0. 1% by mass and less than 60% by mass.
3. The production method according to claim 1 , wherein the second solvent is an ester, an alcohol, an ether, a carbonate or a combination thereof.
4. The production method according to claim 3 , wherein the ester is a carboxylic acid ester.
5. The production method according to claim 3 , wherein the alcohol is a polyhydric alcohol, a polyhydric alcohol partial ether, or a combination thereof.
6. The production method according to claim 3 , wherein the ether is a dialkylene glycol monoalkyl ether acetate.
7. The production method according to claim 1 , wherein a value of a relative evaporation rate of the second solvent is no less than 0.01 and no greater than 10, provided that the value of butyl acetate is 100.
8. The production method according to claim 1 , wherein a value of a relative evaporation rate of the second solvent is no less than 0.05 and no greater than 6, provided that the value of butyl acetate is 100.
9. The production method according to claim 1 , wherein a value of a relative evaporation rate of the second solvent is no less than 0.1 and no greater than 4, provided that the value of butyl acetate is 100.
10. The production method according to claim 1 , wherein a percentage content of the second solvent in the solvent is no less than 1% by mass and no greater than 50% by mass.
11. The production method according to claim 1 , wherein a percentage content of the second solvent in the solvent is no less than 2% by mass and no greater than 45% by mass.
12. The production method according to claim 1 , wherein a percentage content of the second solvent in the solvent is no less than 5% by mass and no greater than 40% by mass.
13. The production method according to claim 1 , wherein a percentage content of the second solvent in the solvent is no less than 10% by mass and no greater than 25% by mass.