Lithography apparatus

1. A lithography apparatus, comprising:

a reticle having a first surface and a second surface opposite each other, and a pattern region formed on the first surface;

a reticle stage facing the second surface of the reticle, the reticle stage to chuck the reticle;

a first power source to provide a negative voltage to the first surface of the reticle so as to prevent adsorption of particles onto the reticle;

a conductor in physical contact with the reticle and to which a voltage is provided; and

a second power source to provide the voltage to the conductor.

2. The lithography apparatus as claimed in claim 1 , further comprising an electron supply to provide electrons to the particles on the first surface of the reticle or on a periphery of the reticle.

3. The lithography apparatus as claimed in claim 1 , wherein the conductor forms an electric field curtain to adjust a moving direction of the particles on the first surface of the reticle or on a periphery of the reticle.

4. The lithography apparatus as claimed in claim 3 , wherein:

a negative voltage is applied to the conductor, and

the electric field curtain causes the particles to be moved farther away from the reticle by applying repulsive force to the particles.

5. The lithography apparatus as claimed in claim 3 , wherein:

a positive voltage is applied to the conductor, and

the electric field curtain captures the particles by applying attraction to the particles before the particles reach the reticle.

6. The lithography apparatus as claimed in claim 3 , wherein:

the electric field curtain includes a first conductor, wherein a negative voltage is applied to the first conductor, and a second conductor, wherein a positive voltage is applied to the second conductor, and

the electric field curtain moves the particles in a direction from the first conductor to the second conductor.

7. The lithography apparatus as claimed in claim 1 , wherein the reticle is chucked to the reticle stage with electrostatic force.

8. The lithography apparatus as claimed in claim 1 , wherein the conductor extends from the first surface away from the reticle stage.

9. A lithography apparatus, comprising:

a reticle having a first surface and a second surface opposite each other along a first direction, and a pattern region formed on the first surface;

a reticle stage facing the second surface of the reticle, the reticle stage to chuck the reticle;

an electric field curtain arranged to adjust a moving direction of particles, the electric field curtain being on the first surface of the reticle or on a periphery of the reticle, and including at least one or more conductors, the electric field curtain extending past the pattern region along the first direction; and

a first power source to provide a negative voltage to the first surface of the reticle so as to prevent adsorption of particles onto the reticle; and

a second power source to provide a voltage to the at least one or more conductors.

10. The lithography apparatus as claimed in claim 9 , further comprising an electron supply to provide electrons to the particles on the first surface of the reticle or on the periphery of the reticle.

11. The lithography apparatus as claimed in claim 9 , wherein a negative voltage is applied to the first surface of the reticle.

12. The lithography apparatus as claimed in claim 9 , wherein:

a negative voltage is applied to the one or more conductors, and

the electric field curtain causes the particles to be moved farther away from the reticle by applying repulsive force to the particles.

13. The lithography apparatus as claimed in claim 9 , wherein:

a positive voltage is applied to the one or more conductors, and

the electric field curtain captures the particles by applying attraction to the particles before the particles reach the reticle.

14. The lithography apparatus as claimed in claim 9 , wherein:

the electric field curtain includes a first conductor to be provided with a negative voltage and a second conductor to be provided with a positive voltage, and

the electric field curtain moves the particles in a direction from the first conductor to the second conductor.

15. A lithography apparatus, comprising:

a source to provide an exposure light;

a first sub-chamber including at least one or more lighting system reflective mirrors disposed therein to reflect the exposure light;

a reticle stage module including a reticle reflecting the exposure light output from the first sub-chamber;

a second sub-chamber including at least one or more projection optical system reflective mirrors therein to project the exposure light reflected from the reticle onto a wafer;

a conductor in physical contact with the reticle;

a wafer stage to which the wafer is to be chucked;

a first power source to provide a negative voltage to the first surface of the reticle so as to prevent adsorption of particles onto the reticle; and

a second power source to provide a voltage to the conductor,

wherein the reticle includes a first surface on which the exposure light is incident, and a pattern region on the first surface.

16. The lithography apparatus as claimed in claim 15 , wherein the reticle stage module further includes an electron supply to provide electrons to the particles on the first surface of the reticle or on a periphery of the reticle.

17. The lithography apparatus as claimed in claim 15 , wherein the conductor forms an electric field curtain to adjust a moving direction of the particles on the first surface of the reticle or on a periphery of the reticle.

18. The lithography apparatus as claimed in claim 15 , wherein the second sub-chamber further includes a particle capture electrode within the second sub-chamber, a positive voltage being applied to the particle capture electrode.

19. The lithography apparatus as claimed in claim 15 , wherein the exposure light is extreme ultraviolet (EUV) light.