Methods and system for processing semiconductor device structures
View Patent ↗Methods of detaching semiconductor device structures from carrier structures may involve directing a laser through a carrier structure comprising a semiconductor material to a barrier material located between the carrier structure and a semiconductor device structure adhere to an opposite side of the barrier material. A bond between the carrier structure and an adhesive material temporarily securing the carrier structure to the semiconductor device structure may be released in response to heating of the barrier material by the laser beam. The carrier structure may be removed from the semiconductor device structure, the barrier material removed, and an adhesive bonding the semiconductor device structure to the barrier material removed.
1. A method of processing a semiconductor device, the method comprising:
directing a laser beam through a carrier structure to heat a barrier material located between the carrier structure and a semiconductor device structure on an opposite side of the barrier material;
releasing a bond between the carrier structure and an adhesive material securing the carrier structure to the barrier material responsive to the heat, the adhesive material comprising a thermoset material;
leaving the barrier material intact and leaving a temporary attachment between the barrier material, another adhesive material securing the semiconductor device structure to the barrier material, and the semiconductor device structure intact, the another adhesive material comprising a thermoplastic material; and
removing the carrier structure from the barrier material.
2. The method of claim 1 , wherein directing the laser beam through the carrier structure comprises directing the laser beam through a semiconductive material of the carrier structure.
3. The method o claim 1 , further comprising, before directing the laser beam, bonding the semiconductor device structure to the barrier material with the another adhesive material.
4. The method of claim 3 , wherein releasing the bond between the carrier structure and the adhesive material comprises one of vaporizing or ashing the adhesive material.
5. The method of claim 3 , wherein leaving the temporary attachment between the barrier material, the another adhesive material securing the semiconductor device structure to the barrier material, and the semiconductor device structure intact comprises maintaining a temperature of the another adhesive material below about 400° C.
6. The method of claim 3 , wherein releasing the bond between the carder structure and the adhesive material in response to the heat comprises releasing the bond between the carder structure and the adhesive material at a temperature lower than a glass transition temperature of the another adhesive material.
7. The method of claim 3 , further comprising removing the barrier material from the another adhesive material after removing the carrier structure from the semiconductor device structure.
8. The method of claim 7 , wherein removing the barrier material from the another adhesive material comprises etching the barrier material from the another adhesive material.
9. The method of claim 7 , further comprising removing the another adhesive material from the semiconductor device structure after removing the barrier material from the another adhesive material.
10. The method of claim 9 , wherein removing the another adhesive material from the semiconductor device structure comprises exposing the another adhesive material to a solvent.
11. The method of claim 1 , wherein removing the carrier structure from the barrier material comprises laterally or vertically displacing the carrier structure relative to the semiconductor device structure while the semiconductor device structure is supported by a support structure.
12. The method of claim 1 , wherein removing the carrier structure from the semiconductor device structure comprises applying substantially zero force on the semiconductor device structure when removing the carrier structure.
13. The method of claim 1 , wherein directing the laser beam through the carrier structure to the barrier material comprises directing the laser beam at an infrared, an ultraviolet, or a green wavelength through the carrier structure to the barrier material.
14. The method of claim 1 , wherein directing the laser beam through the carrier structure to the barrier material comprises directing the laser beam through the carrier structure to the barrier material exhibiting a thickness of 0.5microns or less.
15. A method of processing a semiconductor device structure, comprising:
securing a carrier structure to a semiconductor device structure with a first adhesive material comprising a thermoset material in contact with the carrier structure, a barrier material located on a side of the first adhesive material opposite the carrier structure, and a second adhesive material comprising a thermoplastic material located between the barrier material and the semiconductor device structure;
securing a support structure to the semiconductor device structure on a side of the semiconductor device structure opposite the carrier structure;
directing a laser beam through the first adhesive material of the carrier structure to impinge on the barrier material;
releasing a bond between the carrier structure and the first adhesive material responsive to heating of the barrier material by the laser beam;
leaving the barrier material intact and leaving a temporary attachment between the barrier material, the second adhesive material, and the semiconductor device structure intact; and
removing the carrier structure from the semiconductor device structure.
16. The method of claim 15 , wherein securing the carrier structure to the semiconductor device structure comprises placing the first adhesive material on the carrier structure, placing the barrier material on the first adhesive material, placing the second adhesive material on the semiconductor device structure, and contacting the second adhesive material to the barrier material.
17. The method of claim 15 , wherein securing the carrier structure to the semiconductor device structure comprises placing the second adhesive material on the semiconductor device structure, placing the barrier material on the second adhesive material, placing a precursor material to the first adhesive material or partially curing the first adhesive material on the barrier material, contacting the carrier structure to the precursor material or the partially cured first adhesive material, and curing the precursor material or partially cured first adhesive material to form the first adhesive material.
18. The method of claim 15 , further comprising reducing a thickness of the semiconductor device structure after securing the semiconductor device structure to the carrier structure and before securing the support structure to the semiconductor device structure.
19. The method of claim 18 , further comprising reducing a thickness of the carrier structure before reducing the thickness of the semiconductor device structure and while secured to the semiconductor device structure.
20. The method of claim 19 , wherein reducing the thickness of the carrier structure and reducing the thickness of the semiconductor device structure comprises utilizing a same thickness-reduction apparatus to reduce the thickness of the carrier structure and to reduce the thickness of a semiconductor device wafer by removing a semiconductor material of the carrier structure and removing a semiconductor material of the semiconductor device wafer.
21. The method of claim 15 , wherein securing the support structure to a semiconductor device wafer comprises securing the semiconductor device wafer to an adhesive film carried by a film frame.