Nanoporous semiconductor thin films

1. A nanoporous semiconducting device comprising:

a) a substrate having a dielectric layer;

b) a nanoporous insulating layer comprising one or more insulating polymers that are crosslinked with a cross-linking agent, wherein the weight ratio of the one or more insulating polymers and cross-linking agent is 20:1 to 1:1;

c) a layer comprising an organic semiconductor having a conjugated core, wherein the nanoporous insulating layer and the organic semiconductor comprise a plurality of nanopore channels that have an average pore diameter ranging from 50 nm to about 1500 nm, the conjugated core of the organic semiconductor is oriented parallel to the perimeter of a nanopore channel such that a charge-transfer with an analyte entering the nanopore channel can be facilitated, and the organic semiconductor optionally comprises a small molecule; and

d) a coating at the surface of the organic semiconductor comprising a dopant; wherein the plurality of nanopore channels extend from the surface of the organic semiconductor layer, through the nanoporous insulating layer and to the dielectric layer; and

wherein the one or more insulating polymers comprise poly(4-vinylphenol) (PVP), the cross-linking agent comprises 4,4′-(hexafluoroisopropylidene) diphthalic anhydride (HDA), the organic semiconductor comprises poly(diketopyrrolopyrrole-thiophene-thieno[3,2,b]thiophene-thiophene) (DPP-TT), and the dopant comprises polyethylenimine (PEI).

2. The device of claim 1 , wherein the ratio of PVP to HDA is about 1:1 to about 10:1.

3. The device of claim 1 , wherein the organic semiconductor comprises the small molecule wherein the small molecule is a benzothieno[3,2-b]benzothiophene (BTBT), a dinaphthothieno[3,2-b]thiophene (DNTT), a perplene diimide (PDI), a naphthalene diimide (NDI), a quinoidal terthiophene (DQTT), a phenyl-butyric acid methyl ester, a buckminsterfullerene (C60), a pentacene, a rubrene, or a combination thereof.

4. An organic field-effect transistor (OFET) comprising: the nanoporous semiconducting device of claim 1 , a source electrode, and a drain electrode, wherein the substrate comprises a bottom-gate electrode.

5. A method of detecting an analyte, the method comprising:

a) exposing the organic field-effect transistor (OFET) of claim 4 to a sample comprising an analyte, wherein the analyte interacts with the pi-electrons of the organic semiconductor, thereby causing a change in current;

b) optionally measuring a baseline current in OFET; and

c) detecting a change in the current; wherein a detectable change in current indicates the presence of the analyte, and wherein the analyte is a small molecule or a macromolecule.

6. The method of claim 5 wherein the limit of detection is as low as about 1 part per billion.

7. The method of claim 5 wherein the total surface area of the plurality of nanopore channels in the nanoporous semiconducting device as a fraction of the total surface area of the organic semiconductor layer is proportional to the sensitivity of detection.

8. The method of claim 5 wherein the analyte donates electrons to a p-type nanopore channel to decrease current, the analyte accepts electrons from a p-type nanopore channel to increase current, the analyte donates electrons to a n-type nanopore channel to increase current, or the analyte accepts electrons from an n-type nanopore channel to decrease current.

9. The method of claim 5 wherein the dopant can donate electrons to the organic semiconductor, or accept electrons from the organic semiconductor, thereby forming a charge-transfer complex having a charge carrier concentration at the organic semiconductor.

10. The method of claim 9 wherein the analyte reacts with the dopant thereby changing the charge carrier concentration at the organic semiconductor and changing the source-drain current of the OFET.

11. A method of fabricating the nanoporous semiconducting device of claim 1 , the method comprising:

a) coating a substrate with a solution to form a film, wherein the solution comprises one or more insulating polymers, a cross-linking agent, and a porogen for inducing nucleation and pore formation;

b) curing the film to form a microphase separated nanoporous insulating layer on the substrate;

c) optionally modifying the hydrophobicity of the surface of the nanoporous insulating layer; and

d) depositing an organic semiconductor on the surface of the nanoporous insulating layer;

wherein steps a-d result in the formation of a nanoporous semiconducting device having a semiconducting surface area that is higher relative to the semiconducting surface area of semiconducting device lacking a plurality of nanopore channels.

12. The method of claim 11 wherein the porogen comprises tetrahydrofuran (THF), propylene glycol monomethyl ether acetate (PGMEA), dimethylformamide (DMF), dimethyl sulfoxide (DMSO), chloroform, chlorobenzene, dichlorobezene, acetone, acetonitrile, ethanol, isopropanol, or a combination thereof.

13. The method of claim 11 wherein coating a substrate with the film is performed by spin coating, drop casting, meniscus guided coating, roll-to-roll printing, flexographic printing, slot-die coating, gravure printing, bar-coating, screen printing, ink-jet printing, pen-writing, spray coating, transfer printing, contact printing, or laser printing.

14. The method of claim 11 wherein the substrate is a flexible substrate, a rigid substrate, or a combination thereof, and wherein the substrate optionally comprises SiO 2 , Al 2 O 3 , HfO 2 , V 2 O 5 , TiO, an insulating polymer, divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB), or tetratetracontane.