MULTI-FUNCTION RESISTANCE CHANGE MEMORY CELLS AND APPARATUSES INCLUDING THE SAME
Various embodiments comprise apparatuses having a number of memory cells including drive circuitry to provide signal pulses of a selected time duration and/or amplitude, and an array of resistance change memory cells electrically coupled to the drive circuitry. The resistance change memory cells may be programmed for a range of retention time periods and operating speeds based on the received signal pulse. Additional apparatuses and methods are described.
1 . An apparatus, comprising:
a number of resistance change memory (RCM) cells; and
drive circuitry electrically coupled to each of the number of RCM cells to provide a signal pulse, the signal pulse having a selectable attribute configured to emulate a determined memory function type, to one or more selected ones of the number of RCM cells.