Interconnection for memory electrodes
Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.
1. An integrated circuit comprising:
a first layer comprising a first conductive line and a first paddle;
a second layer comprising a second conductive line and a second paddle; and
a first conductor in contact with the first paddle and the second paddle, the first conductor providing a path for an electrical signal to pass from the first layer to the second layer.
2. The integrated circuit of claim 1 , wherein the first layer and the first paddle extend in a first direction and the second layer and the second paddle extend in a second direction different than the first direction.
3. The integrated circuit of claim 2 , wherein the first conductor extends in a third direction different than the first direction, the second direction, or both.
4. The integrated circuit of claim 2 , wherein a length of the first paddle in the first direction is equal to a length of the second paddle in the second direction.
5. The integrated circuit of claim 2 , further comprising:
a third layer comprising a third conductive line and a third paddle.
6. The integrated circuit of claim 5 , further comprising:
a first plurality of paddles extending between a set of first conductive lines that comprises the first conductive line, the first plurality of paddles comprising the first paddle.
7. The integrated circuit of claim 6 , further comprising:
a second plurality of paddles extending between a set of second conductive lines that comprises the second conductive line, the second plurality of paddles comprising the second paddle.
8. The integrated circuit of claim 7 , further comprising:
a second conductor in contact with the second paddle and the third paddle to provide a second path for a second electrical signal to pass from the second layer to the third layer.
9. An integrated circuit, comprising:
an inner conductive line and an outer conductive line that extends beyond an end of the inner conductive line;
a first conductive line that extends beyond a termination end of the outer conductive line, wherein each of the inner conductive line and the outer conductive line includes a jog segment; and
a connector connected to one of the jog segments.
10. The integrated circuit of claim 9 , further comprising a second conductive line, wherein the first conductive line and the second conductive line are separated by a gap in at least one direction, and wherein the connector is formed in the gap.
11. The integrated circuit of claim 10 , wherein the first conductive line and the second conductive line are aligned in a first direction.
12. The integrated circuit of claim 10 , wherein the first conductive line extends in a first direction and the second conductive line extends in a second direction different than the first direction.
13. The integrated circuit of claim 12 , wherein the connector extends in a third direction different than the first direction and the second direction, wherein the first direction is orthogonal to the second direction.
14. The integrated circuit of claim 9 , wherein the outer conductive line is formed at a same vertical level as the termination end of the outer conductive line.
15. A memory device comprising:
a first layer comprising a first conductive line and a first paddle;
a second layer comprising a second conductive line and a second paddle;
a conductor in contact with the first paddle and the second paddle; and
a controller coupled with the memory device, the controller operable to:
send a signal to the second layer through the first conductive line, the first paddle, and the conductor.
16. The memory device of claim 15 , wherein the first layer further comprises a first transistor in electronic communication with the first conductive line and the second layer further comprises a second transistor in electronic communication with the second conductive line, wherein the controller is further operable to:
send the signal to the second transistor through the first transistor.
17. The memory device of claim 15 , wherein the first layer further comprises a first transistor in electronic communication with the first conductive line and the second layer further comprises a memory cell in electronic communication with the second conductive line, wherein the controller is further operable to:
send the signal to the memory cell through the first transistor.
18. The memory device of claim 17 , wherein the first layer further comprises a first driver region and the second layer further comprises a second driver region, wherein the controller is further operable to:
send the signal to the memory cell through the first transistor based at least in part on a location of the first driver region and a location of the second driver region.
19. The memory device of claim 17 , wherein each of the first conductive line and the second conductive line extend in a first direction.
20. The memory device of claim 17 , further comprising:
a third layer comprising a third conductive line and a third paddle; and
a second vertical connector in contact with the second paddle and the third paddle, wherein the controller is further operable to:
send the signal to the third layer through each of the first transistor, the second vertical connector, and the memory cell.