LASER DOPING APPARATUS AND LASER DOPING METHOD

1 . A laser doping apparatus that irradiates a predetermined region of a semiconductor material with a pulse laser beam to perform doping, comprising:

a solution supplying system configured to supply dopant-containing solution to the predetermined region; and

a laser system including

at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and

a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.

2 . The laser doping apparatus according to claim 1 , wherein the solution supplying system includes a pump configured to flow the dopant-containing solution along a surface of the predetermined region.

3 . The laser doping apparatus according to claim 1 , wherein the time-domain pulse waveform changing apparatus includes an optical pulse stretcher.

4 . The laser doping apparatus according to claim 1 , further comprising optics configured to irradiate the predetermined region of the semiconductor material, wherein

the at least one laser device includes a plurality of laser devices,

the time-domain pulse waveform changing apparatus includes a delay circuit configured to control timing of each of pulse laser beams outputted from the respective laser devices, and

the optics combine the pulse laser beams outputted from the respective laser devices to irradiate the predetermined region with the pulse laser beams.

5 . The laser doping apparatus according to claim 4 , further comprising a controller configured to control the laser devices such that the pulse laser beams outputted by the respective laser devices have time-domain pulse waveforms different from each other.

6 . The laser doping apparatus according to claim 1 , wherein the semiconductor material is one of SiC, diamond, and GaN.

7 . The laser doping apparatus according to claim 1 , wherein the pulse laser beam outputted from the laser system has a pulse width ΓT TIS equal to or greater than 80 ns, the pulse width ΔT TIS being defined by following formula:

Δ T TIS =[∫I ( t ) dt] 2 /∫I ( t ) 2 dt,

where I(t) is an optical intensity at a time t in the time-domain pulse waveform.

8 . The laser doping apparatus according to claim 1 , wherein the dopant-containing solution is aluminum chloride aqueous solution.

9 . The laser doping apparatus according to claim 1 , wherein the dopant-containing solution is boric acid aqueous solution.

10 . The laser doping apparatus according to claim 1 , wherein the pulse laser beam has a wavelength of 248 nm or more and 308 nm or less.

11 . A laser doping apparatus that irradiates a predetermined region of a semiconductor material with a pulse laser beam to perform doping, comprising:

a solution supplying system configured to supply boron-containing solution to the predetermined region; and

at least one laser device configured to output the pulse laser beam to be transmitted by the boron-containing solution.

12 . The laser doping apparatus according to claim 11 , wherein the boron-containing solution is boric acid aqueous solution, and

the pulse laser beam has a wavelength of 248 nm or more and 308 nm or less.

13 . A laser doping method to irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping, comprising:

supplying dopant-containing solution to the predetermined region;

outputting the pulse laser beam to be transmitted by the dopant-containing solution, and

controlling a time-domain pulse waveform of the pulse laser beam.