Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions
View Patent ↗Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.
1. A method of forming an integrated structure, the method comprising:
forming an optical isolation region in a substrate;
forming a first polysilicon material over the substrate and optical isolation region;
removing a portion of the first polysilicon material in a region which is over and vertically aligned with the optical isolation region;
forming a second polysilicon material in the region over and vertically aligned with the optical isolation region; and
patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.
2. A method of forming an integrated structure as in claim 1 , wherein the first and second polysilicon materials have different optical transmission properties.
3. A method of forming an integrated structure as in claim 1 , wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.
4. A method of forming an integrated structure as in claim 1 , wherein the first photonic device comprises a defect state photodetector.
5. A method of forming an integrated structure as in claim 1 , wherein the second polysilicon material comprises an amorphized and recrystallized polysilicon material.
6. A method of forming an integrated structure as in claim 1 , further comprising forming a nitride material over the waveguide core, but not over the first photonic device.
7. A method of forming an integrated structure as in claim 1 , wherein forming the second polysilicon material comprises:
forming an amorphous silicon in the first polysilicon material in a region over the optical isolation region; and
annealing the amorphous silicon to convert the amorphous silicon to a polysilicon material.
8. A method of forming an integrated structure, the method comprising:
forming an optical isolation region in a substrate;
forming a first polysilicon material over the substrate, including over a region above and vertically aligned with an optical isolation region;
implanting the region of the first polysilicon material above and vertically aligned with the optical isolation region with silicon to create an amorphous silicon region;
annealing the implanted region to create a second polysilicon material; and
patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.