Method of fabricating a semiconductor device

1. A method of fabricating a semiconductor device, the method comprising:

forming a deposition active layer and a guide pattern on a semiconductor substrate such that the guide pattern delimits an exposed surface of the deposition active layer; and

selectively depositing a metal-containing layer on the exposed surface of the deposition active layer exposed by the guide pattern,

wherein the deposition active layer is a nonmetal layer,

wherein the metal-containing layer is not deposited on a top surface of the guide pattern, and

wherein selectively depositing the metal-containing layer includes repeating a process cycle a predetermined number of times, each process cycle including:

supplying a first source gas, the first source gas having a high adsorption rate on the deposition active layer and having a low adsorption rate on the guide pattern,

purging the first source gas that is not adsorbed on the deposition active layer;

supplying a second source gas that contains a metallic element constituting the metal-containing layer and that reacts with molecules of the first source gas adsorbed on the deposition active layer, to form a metal-containing single atomic layer of the metal-containing layer on the deposition active layer; and

purging the second source gas that does not react with the molecules of the first source gas.

2. The method as claimed in claim 1 , wherein the deposition active layer is a single crystalline silicon layer that is doped with impurities or is undoped or a poly-crystalline silicon layer that is doped with impurities or is undoped.

3. The method as claimed in claim 1 , wherein the guide pattern is formed of silicon oxide, silicon nitride, or a hydrocarbon-based material.

4. The method as claimed in claim 1 , wherein the metal-containing layer is formed of tungsten (W), tungsten nitride (WN), tungsten carbide (WC), titanium (Ti), tantalum (Ta), aluminum (Al), or hafnium (Hf).

5. The method as claimed in claim 1 , wherein:

the metal-containing layer is formed of tungsten,

the first source gas includes hydrogen (H 2 ), monosilane (SiH 4 ), or diborane (B 2 H 6 ), and

the second source gas includes a tungsten halide or a tungsten-containing metal organic material.

6. The method as claimed in claim 1 , further comprising forming a gate insulating layer on the semiconductor substrate prior to forming the deposition active layer and the guide pattern,

wherein:

the deposition active layer is provided on the gate insulating layer and is a part of a gate electrode of the semiconductor device,

the guide pattern is a spacer covering a sidewall of the gate electrode, and

the metal-containing layer is provided on the deposition active layer and is another part of the gate electrode.

7. The method as claimed in claim 1 , further comprising:

forming a mold layer on the semiconductor substrate prior to forming the deposition active layer and the guide pattern; and

removing the guide pattern and patterning the deposition active layer and the mold layer using the metal-containing layer as an etch mask after forming the metal-containing layer.

8. The method as claimed in claim 7 , wherein:

forming the metal-containing layer includes forming a plurality of island-shaped holes that are spaced apart from each other in the metal-containing layer,

patterning the mold layer includes forming a plurality of lower electrode holes in the mold layer, and

the method further includes:

forming a lower electrode in each of the lower electrode holes;

removing the metal-containing layer, the deposition active layer, and the mold layer to expose a surface of the lower electrode;

forming a dielectric layer to cover the surface of the lower electrode; and

forming an upper electrode on the dielectric layer.

9. The method as claimed in claim 7 , wherein:

forming the metal-containing layer includes forming a plurality of island-shaped holes that are spaced apart from each other in the metal-containing layer,

the mold layer includes gate interlayered insulating layers and sacrificial layers that are sequentially and alternately stacked one on another,

patterning the mold layer includes forming a plurality of channel holes in the mold layer, and

the method further includes:

forming a channel pillar in each of the channel holes;

removing the sacrificial layers to partially expose sidewalls of the channel pillar; and

forming a word line in a region that is formed by removing each of the sacrificial layers, and a gate insulating layer between the channel pillar and the word line.

10. The method as claimed in claim 7 , wherein:

forming the metal-containing layer includes forming a plurality of line-shaped patterns that are spaced apart from and parallel to each other in the metal-containing layer,

the mold layer includes gate interlayered insulating layers and sacrificial layers that are sequentially and alternately stacked one on another,

patterning the mold layer includes forming a plurality of grooves in the mold layer, and

the method further includes:

removing the sacrificial layers through the grooves; and

forming a gate insulating layer and a word line in each of gap regions which are formed by removing the sacrificial layers.

11. A method of fabricating a semiconductor device, the method comprising:

forming a mold layer on a semiconductor substrate;

forming a deposition active layer on the mold layer;

forming a guide pattern on the deposition active layer to define an exposed surface of the deposition active layer;

forming a metal mask pattern on the exposed surface of the deposition active layer using an area-selective deposition method;

removing the guide pattern; and

sequentially etching the deposition active layer and the mold layer by using the metal mask pattern as an etch mask,

wherein the metal mask pattern is not formed on a top surface of the guide pattern, and

wherein forming the metal mask pattern includes repeating a process cycle a predetermined number of times, each process cycle including:

supplying a first source gas, the first source gas having a high adsorption rate on the deposition active layer and having a low adsorption rate on the guide pattern,

purging the first source gas that is not adsorbed on the deposition active layer;

supplying a second source gas that contains a metallic element constituting the metal mask pattern and that reacts with molecules of the first source gas adsorbed on the deposition active layer, to form a metal-containing single atomic layer of the metal mask pattern on the deposition active layer; and

purging the second source gas that does not react with the molecules of the first source gas.

12. The method as claimed in claim 11 , wherein:

the metal mask pattern is in the form of a plurality of islands that are spaced apart from each other,

etching the mold layer includes forming a plurality of lower electrode holes in the mold layer, and

the method further includes:

forming a lower electrode in each of the lower electrode holes; and

removing the metal mask pattern, the deposition active layer, and the mold layer to expose a surface of the lower electrode.

13. The method as claimed in claim 11 , wherein:

the metal mask pattern is in the form of a plurality, of islands that are spaced apart from each other,

the mold layer includes gate interlayered insulating layers and sacrificial layers that are alternately stacked one on another,

etching the mold layer includes forming a plurality of channel holes in the mold layer, and

the method further includes:

forming a channel pillar in each of the channel holes;

removing the sacrificial layers to partially expose sidewalls of the channel pillar; and

forming a gate insulating layer and a word line in each of regions that are formed by removing the sacrificial layers.

14. The method as claimed in claim 11 , wherein:

the metal mask pattern is in the form of a plurality of line-shaped patterns that are spaced apart from each other,

the mold layer includes gate interlayered insulating layers and sacrificial layers that are alternately stacked one on another,

the etching of the mold layer includes forming a plurality of grooves in the mold layer, and

the method further includes:

removing the sacrificial layers through the grooves; and

forming a gate insulating layer and a word line in each of regions that are formed by removing the sacrificial layers.

15. A method of fabricating a semiconductor device, the method comprising:

forming an etching target layer on a semiconductor substrate;

forming a deposition active layer on the etching target layer;

forming a guide pattern on the deposition active layer such that the guide pattern exposes a surface of the deposition active layer;

selectively depositing a metal-containing layer on the surface of the deposition active layer exposed by the guide pattern to form a metal-containing etching mask; and

etching the etching target layer using the metal-containing etching mask,

wherein the metal-containing layer is not deposited on a top surface of the guide pattern, and

wherein selectively depositing the metal-containing layer includes repeating a process cycle a predetermined number of times, each process cycle including:

supplying a first source gas, the first source gas having a high adsorption rate on the deposition active layer and having a low adsorption rate on the guide pattern,

purging the first source gas that is not adsorbed on the deposition active layer;

supplying a second source gas that contains a metallic element constituting the metal-containing layer and that reacts with molecules of the first source gas adsorbed on the deposition active layer, to form a metal-containing single atomic layer of the metal-containing layer on the deposition active layer; and

purging the second source gas that does not react with the molecules of the first source gas.

16. The method as claimed in claim 15 , wherein the deposition active layer is a single crystalline silicon layer that is doped with impurities or is undoped or a poly-crystalline silicon layer that is doped with impurities or is undoped.

17. The method as claimed in claim 15 , wherein the guide pattern is formed of silicon oxide, silicon nitride, or a hydrocarbon-based material.

18. The method as claimed in claim 15 , wherein the metal-containing layer is formed of tungsten (W), tungsten nitride (WN), tungsten carbide (WC), titanium (Ti), tantalum (Ta), aluminum (Al), or hafnium (Hf).