Method of manufacturing semiconductor device
Described herein is a technique capable of suppressing the deviation in the characteristic of the semiconductor device. A method of manufacturing a semiconductor device may include: (a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and (b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region and a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region are within a predetermined range.
1. A method of manufacturing a semiconductor device comprising:
(a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and
(b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that:
a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region forms a width of a third pillar; and
a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region forms a width of a fourth pillar,
wherein a difference between the width of the third pillar and the width of the fourth pillar are within a predetermined range such that a pillar width uniformity of an active region is not affected.
2. The method according to claim 1 , further comprising: (c) oxidizing the width adjusting film after performing (b).
3. The method according to claim 2 , further comprising: (d) doping an upper surface of the width adjusting film with an impurity after performing (c).
4. The method according to claim 3 , wherein (b) comprises forming the width adjusting film by supplying a process gas to the substrate such that an amount of exposure to a main component of the process gas per unit area of the substrate in the peripheral region is smaller than an amount of exposure to the main component of the process gas per unit area of the substrate in the center region when the width of the second pillar is greater than the width of the first pillar, and that the amount of exposure to the main component of the process gas per unit area of the substrate in the peripheral region is greater than the amount of exposure to the main component of the process gas per unit area of the substrate in the center region when the width of the second pillar is smaller than the width of the first pillar.
5. The method according to claim 4 , wherein (b) comprises forming the width adjusting film while adjusting a temperature distribution of the substrate such that a temperature of the center region is higher than a temperature of the peripheral region when the width of the second pillar is greater than the width of the first pillar, and that the temperature of the peripheral region is higher than the temperature of the center region when the width of the second pillar is smaller than the width of the first pillar.
6. The method according to claim 3 , wherein (b) comprises forming the width adjusting film while adjusting a temperature distribution of the substrate such that a temperature of the center region is higher than a temperature of the peripheral region when the width of the second pillar is greater than the width of the first pillar, and that the temperature of the peripheral region is higher than the temperature of the center region when the width of the second pillar is smaller than the width of the first pillar.
7. The method according to claim 2 , wherein (b) comprises forming the width adjusting film by supplying a process gas to the substrate such that an amount of exposure to a main component of the process gas per unit area of the substrate in the peripheral region is smaller than an amount of exposure to the main component of the process gas per unit area of the substrate in the center region when the width of the second pillar is greater than the width of the first pillar, and that the amount of exposure to the main component of the process gas per unit area of the substrate in the peripheral region is greater than the amount of exposure to the main component of the process gas per unit area of the substrate in the center region when the width of the second pillar is smaller than the width of the first pillar.
8. The method according to claim 7 , wherein (b) comprises forming the width adjusting film while adjusting a temperature distribution of the substrate such that a temperature of the center region is higher than a temperature of the peripheral region when the width of the second pillar is greater than the width of the first pillar, and that the temperature of the peripheral region is higher than the temperature of the center region when the width of the second pillar is smaller than the width of the first pillar.
9. The method according to claim 2 , wherein (b) comprises forming the width adjusting film while adjusting a temperature distribution of the substrate such that a temperature of the center region is higher than a temperature of the peripheral region when the width of the second pillar is greater than the width of the first pillar, and that the temperature of the peripheral region is higher than the temperature of the center region when the width of the second pillar is smaller than the width of the first pillar.
10. The method according to claim 1 , wherein (b) comprises forming the width adjusting film by supplying a process gas to the substrate such that an amount of exposure to a main component of the process gas per unit area of the substrate in the peripheral region is smaller than an amount of exposure to the main component of the process gas per unit area of the substrate in the center region when the width of the second pillar is greater than the width of the first pillar, and that the amount of exposure to the main component of the process gas per unit area of the substrate in the peripheral region is greater than the amount of exposure to the main component of the process gas per unit area of the substrate in the center region when the width of the second pillar is smaller than the width of the first pillar.
11. The method according to claim 10 , wherein (b) comprises forming the width adjusting film while adjusting a temperature distribution of the substrate such that a temperature of the center region is higher than a temperature of the peripheral region when the width of the second pillar is greater than the width of the first pillar, and that the temperature of the peripheral region is higher than the temperature of the center region when the width of the second pillar is smaller than the width of the first pillar.
12. The method according to claim 1 , wherein (b) comprises forming the width adjusting film while adjusting a temperature distribution of the substrate such that a temperature of the center region is higher than a temperature of the peripheral region when the width of the second pillar is greater than the width of the first pillar, and that the temperature of the peripheral region is higher than the temperature of the center region when the width of the second pillar is smaller than the width of the first pillar.
13. A method of manufacturing a semiconductor device comprising:
(a) measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and
(b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that
a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region forms a width of a third pillar; and
a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region forms a width of a fourth pillar,
wherein a difference between the width of the third pillar and the width of the fourth pillar are within a predetermined range such that a pillar width uniformity of an active region is not affected.