Integrated circuit and manufacturing method thereof

1. An integrated circuit, comprising:

a first insulation layer, wherein a first trench penetrates the first insulation layer;

a bottom plate partly disposed on the first insulation layer and partly disposed in the first trench;

a first patterned dielectric layer disposed on the bottom plate, wherein at least a part of the first patterned dielectric layer is disposed in the first trench;

a medium plate disposed on the first patterned dielectric layer, wherein at least a part of the medium plate is disposed in the first trench, and wherein the bottom plate, the first patterned dielectric layer, and the medium plate constitute a first metal-insulator-metal (MIM) capacitor;

a second patterned dielectric layer disposed on the medium plate; and

a top plate disposed on the second patterned dielectric layer, wherein the medium plate, the second patterned dielectric layer, and the top plate constitute a second MIM capacitor, and the bottom plate is electrically connected with the top plate, wherein the top plate is electrically separated from the medium plate, and the bottom plate is electrically separated from the medium plate.

2. The integrated circuit according to claim 1 , wherein a projection area of the top plate in a thickness direction of the first insulation layer is smaller than a projection area of the medium plate in the thickness direction of the first insulation layer.

3. The integrated circuit according to claim 1 , wherein the medium plate is partly disposed on the first insulation layer and partly disposed in the first trench, and the second patterned dielectric layer is disposed outside the first trench.

4. The integrated circuit according to claim 1 , further comprising:

a second trench penetrating the first insulation layer, wherein a part of the bottom plate, a part of the first patterned dielectric layer, and a part of the medium plate are disposed in the second trench.

5. The integrated circuit according to claim 1 , wherein at least a part of the second patterned dielectric layer and at least a part of the top plate are disposed in the first trench.

6. The integrated circuit according to claim 1 , further comprising:

a conductive layer disposed under the first insulation layer, wherein the first trench is disposed on the conductive layer, and the bottom plate in the first trench is electrically connected with the conductive layer.

7. The integrated circuit according to claim 6 , further comprising:

a second insulation layer disposed on the first insulation layer and the top plate;

a third trench penetrating the second insulation layer and exposing a part of the top plate;

a fourth trench penetrating the second insulation layer and the first insulation layer and exposing a part of the conductive layer; and

a first connection structure disposed in the third trench and the fourth trench, wherein the bottom plate is electrically connected with the top plate via the conductive layer and the first connection structure.

8. The integrated circuit according to claim 7 , further comprising:

a second connection structure disposed on and electrically connected with the medium plate, wherein the second connection structure is electrically separated from the first connection structure.

9. The integrated circuit according to claim 1 , wherein the first trench is filled with the bottom plate, the first patterned dielectric layer, and the medium plate.

10. The integrated circuit according to claim 1 , wherein the first trench is filled with the bottom plate, the first patterned dielectric layer, the medium plate, the second patterned dielectric layer, and the top plate.

11. A manufacturing method of an integrated circuit, comprising:

forming a first trench penetrating a first insulation layer;

forming a bottom plate partly on the first insulation layer and partly in the first trench;

forming a first patterned dielectric layer on the bottom plate, wherein at least a part of the first patterned dielectric layer is formed in the first trench;

forming a medium plate on the first patterned dielectric layer, wherein at least a part of the medium plate is formed in the first trench, and wherein the bottom plate, the first patterned dielectric layer, and the medium plate form a first metal-insulator-metal (MIM) capacitor;

forming a second patterned dielectric layer on the medium plate; and

forming a top plate on the second patterned dielectric layer, wherein the medium plate, the second patterned dielectric layer, and the top plate form a second MIM capacitor, and the bottom plate is electrically connected with the top plate, wherein the top plate is electrically separated from the medium plate, and the bottom plate is electrically separated from the medium plate.

12. The manufacturing method of the integrated circuit according to claim 11 , wherein the steps of forming the bottom plate, the first patterned dielectric layer, the medium plate, and the second patterned dielectric layer comprise:

forming a first metal layer conformally on the first insulation layer and in the first trench;

forming a first dielectric layer conformally on the first metal layer;

forming a second metal layer on the first dielectric layer;

forming a second dielectric layer on the second metal layer; and

performing a first patterning process after the step of forming the second dielectric layer, wherein the first metal layer is patterned to be the bottom plate, the first dielectric layer is patterned to be the first patterned dielectric layer, the second metal layer is patterned to be the medium plate, and the second dielectric layer is patterned to be the second patterned dielectric layer by the first patterning process.

13. The manufacturing method of the integrated circuit according to claim 12 , wherein the step of forming the top plate comprises:

forming a third metal layer on the second dielectric layer; and

performing a second patterning process after the step of forming the third metal layer, wherein the third metal layer is patterned to be the top plate by the second patterning process, and the second patterning process is performed before the first patterning process.

14. The manufacturing method of the integrated circuit according to claim 11 , wherein a projection area of the top plate in a thickness direction of the first insulation layer is smaller than a projection area of the medium plate in the thickness direction of the first insulation layer.

15. The manufacturing method of the integrated circuit according to claim 11 , wherein the medium plate is partly formed on the first insulation layer and partly formed in the first trench, and the second patterned dielectric layer is formed outside the first trench.

16. The manufacturing method of the integrated circuit according to claim 11 , further comprising:

forming a second trench penetrating the first insulation layer, wherein a part of the bottom plate, a part of the first patterned dielectric layer, and a part of the medium plate are formed in the second trench.

17. The manufacturing method of the integrated circuit according to claim 11 , wherein at least a part of the second patterned dielectric layer and at least a part of the top plate are formed in the first trench.

18. The manufacturing method of the integrated circuit according to claim 11 , wherein a conductive layer is formed under the first insulation layer, and the bottom plate in the first trench is electrically connected with the conductive layer.

19. The manufacturing method of the integrated circuit according to claim 18 , further comprising:

forming a second insulation layer on the first insulation layer and the top plate;

forming a third trench penetrating the second insulation layer and exposing a part of the top plate;

forming a fourth trench penetrating the second insulation layer and the first insulation layer and exposing a part of the conductive layer; and

forming a first connection structure in the third trench and the fourth trench, wherein the bottom plate is electrically connected with the top plate via the conductive layer and the first connection structure.

20. The manufacturing method of the integrated circuit according to claim 19 , further comprising:

forming a second connection structure on the medium plate, and the second connection structure being electrically connected with the medium plate, wherein the second connection structure is electrically separated from the first connection structure.