Planar electroluminescent devices and uses thereof
The present invention provides a planar electroluminescence (EL) device comprising a substrate layer, an electrode layer, a light emitting layer, and a modulating layer, wherein the electrode layer comprises a plurality of electrodes arranged on a same level over the substrate layer, and there is no contact between adjacent electrodes. In one embodiment, the device further comprises a hole injection layer (HIL), a hole transport layer (HTL), an electron injection layer (EIL) and an electrode transport layer (ETL). In one embodiment, the light emitting layer comprises organic light emitting polymers or organic light emitting molecules. The device of the present invention would emit light when liquid, polar component, or conductive solution is written directly on the light emitting layer. In one embodiment, the device can emit light for prolonged period when the light emitting layer is coated or deposited with conductive material.
1. A planar electroluminescent device comprising a substrate layer, an electrode layer, a light emitting layer, and a modulating layer, wherein the electrode layer comprises a plurality of electrodes that are arranged on a same level over the substrate layer, there is no contact between adjacent electrodes, and the adjacent electrodes are made from same or different materials,
wherein the modulating layer comprises cations of one of the following ionic conductive material:
where,
methyl, ethyl, propyl (n-, iso-), or butyl (n-, iso-, tert-);
wherein R 3 -R 7 is methyl, ethyl, propyl (n-, iso-), hydroxy, carboxyl, butyl (n-, iso-, tert-), or (CH 2 ) 2 CN, n=3 or 5.
2. The device of claim 1 , further comprising one or more of hole injection layer (HIL), hole transport layer(HTL), electron injection layer (EIL) and electrode transport layer (ETL).
3. The device of claim 1 , wherein the substrate material is made from glass, plastic, ceramic, cloth, wood, metal, or combinations thereof.
4. The device of claim 1 , further comprises an insulating layer which is sandwiched (i) between said electrode layer and said light emitting layer, or (ii) between said light emitting layer and said modulating layer.
5. The device of claim 4 , wherein the insulating layer is made from doped or undoped organic or inorgainc high dielectric constant materials with a conductivity in the range of 1E-9 S/cm to 1E-3 S/cm.
6. The device of claim 2 , wherein the hole injection layer (HIL), hole transport layer(HTL), electron injection layer (EIL) and electrode transport layer (ETL) are made from doped or undoped materials with a conductivity in the range of 1E-9 S/cm to 1E-3 S/cm.
7. The device of claim 2 , wherein the hole injection layer (HIL) comprises one or more of copper phthalocryanine (CuPc), acid-doped PEDOT(poly-3,4-ethylenedioxythiophene), polyaniline (PANi), or polypyrrole (Ppy), 4,4′-bis[(p-trichlorosolylpropyl-pjenyl)phenyla-mino]biphenyl(TPD-Si 2 Cl), 4,4′-bis[p-methyloxylsilylpropylphenyl]phenyamino]-biphenyl (TPD-SI 2 Ome), SiO 2 , SiO x N y and TiO 2 or combinations thereof.
8. The device of claim 2 , wherein the hole transport layer (HTL) comprises one or more of N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD), 4,4′-bis[N-(1-naphthyl-1)-N-phenyl-amino]-biphenyl (α-NPD), 1,3,4,5,6,7-hexaphenyl-2-{3′-(9-ethylcarbazolyl)}-isoindole (HPCzI) and 4,4′,4″-tri(N-dibenzo[a,g]carbazoyl)triphenylamine (TDCTA) or combinations thereof.
9. The device of claim 2 , wherein the electron injection layer (EIL) comprises one or more of Li 2 O, Cs 2 CO 3 , LiF, CsF, Liq, LiMeq, Naq, Liacac, LiBPP or combinations thereof.
10. The device of claim 2 , wherein the electron injection layer (ETL) comprises one or more of Alq 3 , bis(2-(2-hydroxphenyl)benzothiazolate)zinc(II) (Zn(BTZ) 2 ), 1,3,5-tris(N-phenylbenzimidizol-2-yl)benzene (TPBI), Beryllium chelates bis(2-(2-hydroxyphenyl)-pyridine)beryllium (Beq 2 ),bis(10-hydro-xybenzo-quinolinato)beryllium (BeBq 2 ) and 5(4-biphenyl)-2-(4-tert-buty-phenyl)-1,3,4-oxadiazole (PBD) or combinations thereof.
11. The device of claim 1 , wherein the light emitting layer has a thickness of about 0.01 nm-500 μm.
12. The device of claim 1 , wherein the light emitting layer comprises one or more materials selected from the group consisting of organic light emitting polymers, organic light emitting molecules, thermally activated delayed fluorescence (TADF) material, inorganic or organic-inorganic hybrid perovskite materials, and quantum dots materials.
13. The device of claim 1 , wherein the modulating layer has a thickness of 0.01 nm-10 cm.
14. The device of claim 1 , wherein the modulating layer further comprises one or more of electronic conductive material, ionic conductive material, polar material, ionic liquid, water gel, gel electrolyte, or solid electrolyte.
15. The device of claim 1 , wherein the modulating layer further comprises fluorescence or phosphorescence materials.
16. The device of claim 1 , wherein the modulating layer further comprises anions of one of the following ionic conductive material:
Where, R 3 ˜R 13 is methyl, ethyl, propyl (n-, iso-), hydroxy, carboxyl, butyl (n-, iso-, tert-), (CH 2 ) 2 CN (n=3, 5).