Nonvolatile memory device and calibration method for the same

1. A calibration method for a nonvolatile memory device having a plurality of unit cells, each of the unit cells corresponding to a word line and a bit line of the nonvolatile memory device, the method being performed on a non-transitory medium, the calibration method comprising:

calibrating, by the word line, a word signal pulse of each of the word lines with a first calibration value corresponding to the word line;

calibrating, by the bit line, a bit signal pulse of each of the bit lines with a second calibration value corresponding to the bit line; and

calibrating each of the unit cells according to the word line and the bit line corresponding to the unit cell.

2. The calibration method of claim 1 , wherein the first calibration value is a first time variation value, and the second calibration value is a second time variation value.

3. The calibration method of claim 2 , wherein the step of calibrating each of the unit cells according to the word line and the bit line corresponding to the unit cell comprises:

determining a start time of writing the unit cell by a start of the word signal pulse of the word line; and

determining an end time of writing the unit cell by an end of the bit signal pulse of the bit line;

wherein the start of the word signal pulse of the word line is calibrated by the first calibration value, and the end of the bit signal pulse of the bit line is calibrated by the second time variation value.

4. The calibration method of claim 2 , wherein the step of calibrating each of the unit cells according to the word line and the bit line corresponding to the unit cell comprises:

determining a start time of writing the unit cell by a start of the bit signal pulse of the bit line; and

determining an end time of writing the unit cell by an end of the word signal pulse of the word line;

wherein the start of the bit signal pulse of the bit line is calibrated by the first calibration value, and the end of the word signal pulse of the word line is calibrated by the second time variation value.

5. The calibration method of claim 1 , wherein the first calibration value is a first voltage variation value, and the second calibration value is a second voltage variation value.

6. The calibration method of claim 5 , wherein the step of calibrating each of the unit cells according to the word line and the bit line corresponding to the unit cell comprises:

determining a voltage of the unit cell by a word signal voltage and a bit signal voltage;

wherein the word signal voltage is calibrated with the first calibration value, and the bit signal voltage is calibrated with the second calibration value.

7. The calibration method of claim 1 , wherein the first calibration value is a first current variation value, and the second calibration value is a second current variation value.

8. The calibration method of claim 5 , wherein the step of calibrating each of the unit cells according to the word line and the bit line corresponding to the unit cell comprises:

determining a current of the unit cell by a word signal current and a bit signal current;

wherein the word signal current is calibrated with the first calibration value, and the bit signal current is calibrated with the second calibration value.

9. A nonvolatile memory device comprising a plurality of unit cells, each of the unit cells comprising:

a word line having a word signal pulse calibrated with a first calibration value corresponding to the word line; and

a bit line having a bit signal pulse calibrated with a second calibration value corresponding to the bit line;

wherein each of the unit cells is calibrated according to the word line and the bit line of the unit cell.

10. The nonvolatile memory device of claim 9 , wherein the first calibration value is a first time variation value, and the second calibration value is a second time variation value.

11. The nonvolatile memory device of claim 10 , wherein a start time of writing the unit cell is determined by a start of the word signal pulse of the word line, an end time of writing the unit cell is determined by an end of the bit signal pulse of the bit line, the start of the word signal pulse of the word line is calibrated by the first calibration value, and the end of the bit signal pulse of the bit line is calibrated by the second time variation value.

12. The nonvolatile memory device of claim 10 , wherein a start time of writing the unit cell is determined by a start of the bit signal pulse of the bit line, an end time of writing the unit cell is determined by an end of the word signal pulse of the word line, the start of the bit signal pulse of the bit line is calibrated by the first calibration value, and the end of the word signal pulse of the word line is calibrated by the second time variation value.

13. The nonvolatile memory device of claim 9 , wherein the first calibration value is a first voltage variation value, and the second calibration value is a second voltage variation value.

14. The nonvolatile memory device of claim 13 , wherein a voltage of the unit cell is determined by a word signal voltage and a bit signal voltage, the word signal voltage is calibrated with the first calibration value, and the bit signal voltage is calibrated with the second calibration value.

15. The nonvolatile memory device of claim 9 , wherein the first calibration value is a first current variation value, and the second calibration value is a second current variation value.

16. The nonvolatile memory device of claim 15 , wherein a current of the unit cell is determined by a word signal current and a bit signal current, the word signal current is calibrated with the first calibration value, and the bit signal current is calibrated with the second calibration value.